Publication:
Impact of different dose and angle in HALO structure for 45nm NMOS device

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dc.citedby9
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorHamid F.A.en_US
dc.contributor.authorZaharim A.en_US
dc.contributor.authorid36239165300en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid6603573875en_US
dc.contributor.authorid15119466900en_US
dc.date.accessioned2023-12-28T06:30:16Z
dc.date.available2023-12-28T06:30:16Z
dc.date.issued2012
dc.description.abstractIn this paper, we investigates the different dose and tilt HALO implant step in order to characterize the 45nm NMOS device. Besides HALO, the other two process parameters are oxide growth temperature and source/drain (S/D) implant dose. The settings of process parameters were determined by using Taguchi experimental design method. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimizer the process parameters. Threshold voltage (V TH) results were used as the evaluation variable. The results were then subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. In this research, oxide growth temperature was the major factor affecting the threshold voltage (69%), whereas halo implant tilt was the second ranking factor (20%). The percent effect on Signal-to-Noice (S/N) ratio of halo implant dose and S/D implant dose are 6% and 5% respectively. As conclusions, oxide growth temperature and halo implant tilt were identified as the process parameters that have strongest effect on the response characteristics. While S/D implant dose was identified as an adjustment factor to get threshold voltage for NMOS device closer to the nominal value (0.150V) at t ox= 1.1nm.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.4028/www.scientific.net/AMR.383-390.6827
dc.identifier.epage6833
dc.identifier.scopus2-s2.0-83755188202
dc.identifier.spage6827
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-83755188202&doi=10.4028%2fwww.scientific.net%2fAMR.383-390.6827&partnerID=40&md5=bb89f1732e2ac0733eae908a97726f34
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/29501
dc.identifier.volume383-390
dc.pagecount6
dc.sourceScopus
dc.sourcetitleAdvanced Materials Research
dc.subject45nm NMOS
dc.subjectComponent
dc.subjectHALO structure
dc.subjectS/D implant
dc.subjectTaguchi method
dc.subjectTCAD
dc.subjectGrowth temperature
dc.subjectSimulators
dc.subjectTaguchi methods
dc.subjectTechnology
dc.subjectThreshold voltage
dc.subject45nm NMOS
dc.subjectComponent
dc.subjectHALO structure
dc.subjectTaguchi
dc.subjectTCAD
dc.subjectManufacture
dc.titleImpact of different dose and angle in HALO structure for 45nm NMOS deviceen_US
dc.typeConference paperen_US
dspace.entity.typePublication
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