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Influence of deposition time in CdTe thin film properties grown by Close-Spaced Sublimation (CSS) for photovoltaic application

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dc.citedby27
dc.contributor.authorRahman K.S.en_US
dc.contributor.authorHarif M.N.en_US
dc.contributor.authorRosly H.N.en_US
dc.contributor.authorKamaruzzaman M.I.B.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorAlghoul M.en_US
dc.contributor.authorMisran H.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid56348138800en_US
dc.contributor.authorid22634024000en_US
dc.contributor.authorid36873451800en_US
dc.contributor.authorid56674575700en_US
dc.contributor.authorid57195441001en_US
dc.contributor.authorid8626748100en_US
dc.contributor.authorid6506899840en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T07:23:57Z
dc.date.available2023-05-29T07:23:57Z
dc.date.issued2019
dc.description.abstractCadmium Telluride (CdTe) thin films were grown on borosilicate glass substrates by close-spaced sublimation (CSS) at a pressure of 1.5�2 Torr in Ar ambient. CdTe thin films were sublimed at a source temperature of 625 �C and substrate temperature of 595 �C. In this study, the impact of various deposition times on the structural, morphological, topographical, electrical and optical properties of CdTe thin films has been explored to achieve high quality thin film absorber layer for solar cells applications. The crystalline structure, surface morphology, surface topology, electrical and optical properties of the films were examined by using X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Atomic Force Microscopy (AFM), Hall Effect measurement and UV�Vis spectrophotometry, respectively. XRD investigation demonstrated that CdTe film shows polycrystalline nature pronounced with cubic zinc blende structure with a strong preferential (1 1 1) orientation. The FESEM images illustrated that the surface morphology and the average grain size of the films were dependent on the deposition times of CdTe thin films. AFM analysis revealed noteworthy changes in the film's surface roughness values for different deposition times. Carrier concentration was found in the order of 1013 cm?3. Band gap of CdTe thin film was found in the range 1.45�1.48 eV, which is suitable to be used in CdTe thin film solar cells. � 2019 The Authorsen_US
dc.description.natureFinalen_US
dc.identifier.ArtNo102371
dc.identifier.doi10.1016/j.rinp.2019.102371
dc.identifier.scopus2-s2.0-85066410435
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85066410435&doi=10.1016%2fj.rinp.2019.102371&partnerID=40&md5=7917159f97a15ab1aa2765e4cb7d983a
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/24488
dc.identifier.volume14
dc.publisherElsevier B.V.en_US
dc.relation.ispartofAll Open Access, Gold
dc.sourceScopus
dc.sourcetitleResults in Physics
dc.titleInfluence of deposition time in CdTe thin film properties grown by Close-Spaced Sublimation (CSS) for photovoltaic applicationen_US
dc.typeArticleen_US
dspace.entity.typePublication
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