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Effect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUF

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dc.citedby5
dc.contributor.authorLoong J.T.H.en_US
dc.contributor.authorIsmail K.A.S.C.en_US
dc.contributor.authorHamid F.A.en_US
dc.contributor.authorid57191483831en_US
dc.contributor.authorid57193995132en_US
dc.contributor.authorid6603573875en_US
dc.date.accessioned2023-05-29T06:39:06Z
dc.date.available2023-05-29T06:39:06Z
dc.date.issued2017
dc.descriptionResistors; Systems engineering; Aliasing; Applied voltages; High operating frequency; Initial resistance; Memristor; Physically unclonable functions; Window functions; Memristorsen_US
dc.description.abstractThe memristor is the fourth fundamental passive circuit element, whereby it can remember the resistance based on the last applied voltage. Hence, the name 'memory resistor'. Three memristor window functions introduced prior to this paper were taken into discussion where the memristor is inserted into the memristor-based RO-PUF. This was done in order to investigate the effect of having different memristor window functions on the RO-PUF performance in terms of uniqueness, uniformity, and bit-aliasing. While the RO-PUF produces satisfactory results individually, the effect of using different memristor window functions on the RO-PUF performance is not significant. There was little effect because the memristor linearity becomes more prominent with increasing frequency. With that, the memristor acted like a resistor at the high operating frequency of the RO-PUF. Nevertheless, the randomized parameter of initial resistance provided the RO-PUF improved performance. Thus, the RO-PUF performed as expected and is stable regardless of the memristor window function used. � 2016 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo7888086
dc.identifier.doi10.1109/ICAEES.2016.7888086
dc.identifier.epage450
dc.identifier.scopus2-s2.0-85018158866
dc.identifier.spage445
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85018158866&doi=10.1109%2fICAEES.2016.7888086&partnerID=40&md5=217b6334e9c14aeb32f1d8344ddcf12e
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23285
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitle2016 International Conference on Advances in Electrical, Electronic and Systems Engineering, ICAEES 2016
dc.titleEffect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUFen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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