Publication:
Optimisation of N-channel trench power MOSFET using 2 k factorial design method

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dc.citedby0
dc.contributor.authorNur S.I.en_US
dc.contributor.authorIbrahim A.en_US
dc.contributor.authorHafizah H.en_US
dc.contributor.authorid56402634600en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid12784787500en_US
dc.date.accessioned2023-12-29T07:54:13Z
dc.date.available2023-12-29T07:54:13Z
dc.date.issued2009
dc.description.abstractThe main objective of this research is to optimize the trench depth, trench width, epitaxial resistivity and epitaxial thickness in trench power MOSFET so as to obtain high breakdown voltage but low on-resistance. Optimisation of these parameters are based on 2 k factorial design method for achieving specific on-resistance 0.1 m?cm 2 and blocking voltage higher than 30 V. ATHENA and ATLAS software from Silvaco Int. were used for fabrication simulation and device electrical characterisation. The results obtained were, the optimisation value for trench width was 1.25?m, trench depth was 1.25 ?m, epitaxial thickness was 4.75 ?m and epitaxial resistivity was 032 ?cm. The predictive value of breakdown voltage was 39.41 V and significant to factors trench depth, epitaxial thickness and epitaxial resistivity. The predictive value for on-resistance was 0.105 m?cm 2 with significant to factors trench depth, epitaxial thickness and epitaxial resistivity. In conclusion, 2 k factorial design method is successfully utilised in optimizing n-channel trench power MOSFET.en_US
dc.description.natureFinalen_US
dc.identifier.epage698
dc.identifier.issue5
dc.identifier.scopus2-s2.0-70350787085
dc.identifier.spage693
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-70350787085&partnerID=40&md5=9540d9fba1c7696fbd159613440d2a7b
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/30832
dc.identifier.volume38
dc.pagecount5
dc.sourceScopus
dc.sourcetitleSains Malaysiana
dc.subject2 <sup>k</sup> factorial design method
dc.subjectOptimisation
dc.subjectTrench power mosfet
dc.titleOptimisation of N-channel trench power MOSFET using 2 k factorial design methoden_US
dc.typeArticleen_US
dspace.entity.typePublication
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