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Enhanced performance of 19 single gate MOSFET with high permittivity dielectric material

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dc.citedby5
dc.contributor.authorRoslan A.F.en_US
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorZain A.S.M.en_US
dc.contributor.authorKaharudin K.E.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorid57203514087en_US
dc.contributor.authorid36239165300en_US
dc.contributor.authorid55925762500en_US
dc.contributor.authorid56472706900en_US
dc.contributor.authorid12792216600en_US
dc.date.accessioned2023-05-29T08:14:13Z
dc.date.available2023-05-29T08:14:13Z
dc.date.issued2020
dc.description.abstractIn this research, the performance of the 19 nm single gate MOSFET is enhanced through the implementation of the high permittivity dielectric material. The MOSFET scaling trends necessities in device dimensions can be satisfied through the implementation of the high-K dielectric materials in place of the SiO2. Therefore, the 19 nm n-channel MOSFET device with different High-K dielectric materials are implemented and its performance improvement has also been analysed. Virtual fabrication is exercised through ATHENA module from Silvaco TCAD tool. Meanwhile, the device characteristic was utilized by using an ATLAS module. The aforementioned materials have also been simulated and compared with the conventional gate oxide SiO2 for the same structure. At the end, the results have proved that Titanium oxide (TiO2) device is the best dielectric material with a combination of metal gate Tungsten Silicides (WSix). The drive current (ION) of this device (WSix/TiO2) is 587.6 ?A/um at 0.534 V of threshold voltage (VTH) as opposed to the targeted 0.530 V predicted, as well as a relatively low IOFF that is obtained at 1.92 pA/?m. This ION value meets the minimum requirement predicted by International Technology Roadmap for Semiconductor (ITRS) 2013 prediction for low performance (LP) technology. Copyright � 2020 Institute of Advanced Engineering and Science. All rights reserved.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.11591/ijeecs.v18.i2.pp724-730
dc.identifier.epage730
dc.identifier.issue2
dc.identifier.scopus2-s2.0-85078212031
dc.identifier.spage724
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85078212031&doi=10.11591%2fijeecs.v18.i2.pp724-730&partnerID=40&md5=7820e38f30c4e7c484939bce4b49ee51
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25783
dc.identifier.volume18
dc.publisherInstitute of Advanced Engineering and Scienceen_US
dc.relation.ispartofAll Open Access, Gold, Green
dc.sourceScopus
dc.sourcetitleIndonesian Journal of Electrical Engineering and Computer Science
dc.titleEnhanced performance of 19 single gate MOSFET with high permittivity dielectric materialen_US
dc.typeArticleen_US
dspace.entity.typePublication
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