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An experimental investigation of spin-on doping optimization for enhanced electrical characteristics in silicon homojunction solar cells: Proof of concept

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dc.citedby0
dc.contributor.authorMohamad I.S.en_US
dc.contributor.authorKer P.J.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorNorizan M.N.en_US
dc.contributor.authorYap B.K.en_US
dc.contributor.authorTiong S.K.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid55898400600en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid57226822517en_US
dc.contributor.authorid26649255900en_US
dc.contributor.authorid15128307800en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2025-03-03T07:42:53Z
dc.date.available2025-03-03T07:42:53Z
dc.date.issued2024
dc.description.abstractThe pursuit of enhancing the performance of silicon-based solar cells is pivotal for the progression of solar photovoltaics as the most potential renewable energy technologies. Despite the existence of sophisticated methods like diffusion and ion implantation for doping phosphorus into p-type silicon wafers in the semiconductor industry, there is a compelling need to research spin-on doping techniques, especially in the context of tandem devices, where fabricating the bottom cell demands meticulous control over conditions. The primary challenge with existing silicon cell fabrication methods lies in their complexity, cost, and environmental concerns. Thus, this research focuses on the optimization of parameters, such as, deposition of the spin on doping layer, emitter thickness (Xj), and dopant concentration (ND) to maximize solar cell efficiency. We utilized both fabrication and simulation techniques to delve into these factors. Employing silicon wafer thickness of 625 ?m, the study explored the effects of altering the count of dopant layers through the spin-on dopant (SOD) technique in the device fabrication. Interestingly, the increase of the dopant layers from 1 to 4 enhances efficiency, whereby, further addition of 6 and 8 layers worsens both series and shunt resistances, affecting the solar cell performance. The peak efficiency of 11.75 % achieved in fabrication of 4 layers dopant. By using device simulation with wxAMPS to perform a combinatorial analysis of Xj and ND, we further identified the optimal conditions for an emitter to achieve peak performance. Altering Xj between 0.05 ?m and 10 ?m and adjusting ND from 1e+15 cm?3 to 9e+15 cm?3, we found that maximum efficiency of 14.18 % was attained for Xj = 1 ?m and ND = 9e+15 cm?3. This research addresses a crucial knowledge gap, providing insights for creating more efficient, cost-effective, and flexible silicon solar cells, thereby enhancing their viability as a sustainable energy source. ? 2024 The Authorsen_US
dc.description.natureFinalen_US
dc.identifier.ArtNoe31193
dc.identifier.doi10.1016/j.heliyon.2024.e31193
dc.identifier.issue11
dc.identifier.scopus2-s2.0-85193799932
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85193799932&doi=10.1016%2fj.heliyon.2024.e31193&partnerID=40&md5=43ec422f47d2ba3b567a74d3863ef0a4
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/36528
dc.identifier.volume10
dc.publisherElsevier Ltden_US
dc.relation.ispartofAll Open Access; Gold Open Access; Green Open Access
dc.sourceScopus
dc.sourcetitleHeliyon
dc.titleAn experimental investigation of spin-on doping optimization for enhanced electrical characteristics in silicon homojunction solar cells: Proof of concepten_US
dc.typeArticleen_US
dspace.entity.typePublication
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