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Multiple resistive switching behaviours of CH 3 NH 3 PbI 3 perovskite film with different metal electrodes

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dc.citedby18
dc.contributor.authorHow G.T.S.en_US
dc.contributor.authorTalik N.A.en_US
dc.contributor.authorYap B.K.en_US
dc.contributor.authorNakajima H.en_US
dc.contributor.authorTunmee S.en_US
dc.contributor.authorGoh B.T.en_US
dc.contributor.authorid56152438600en_US
dc.contributor.authorid55576358000en_US
dc.contributor.authorid26649255900en_US
dc.contributor.authorid36562269300en_US
dc.contributor.authorid55651673700en_US
dc.contributor.authorid24398718100en_US
dc.date.accessioned2023-05-29T07:25:53Z
dc.date.available2023-05-29T07:25:53Z
dc.date.issued2019
dc.descriptionCharge trapping; Electrodes; organic-inorganic materials; Perovskite; Silver; Switching; Filamentary conduction; Memory applications; Organic-inorganic; Organic-inorganic hybrid; Resistive Random Access Memory (ReRAM); Resistive switching; Resistive switching memory; Write-once-read-many; Random access storageen_US
dc.description.abstractThe utilization of defects in organic-inorganic hybrid perovskite materials such as CH 3 NH 3 PbI 3 is beneficial for memory applications. In this work, a simple CH 3 NH 3 PbI 3 memory device with various commonly used electrodes such as aluminium (Al), silver (Ag), and gold (Au) yielded different switching behaviours. Using Al in ITO/CH 3 NH 3 PbI 3 /Al device reveals Resistive Random Access Memory (ReRAM) behaviour with a SET voltage of 4.5 V and can be RESET by applying a negative sweep voltage above 1.3 V due to the formation of iodide vacancy filament. Interestingly, by using Ag and Au cathodes to replace Al, yielded Write-Once-Read-Many (WORM) resistive switching characteristics. The conversion process from OFF to ON occur at around 4.7 V and 4.0 V for Ag and Au, respectively. The �shorting effect� remains even though a reverse voltage was applied indicating data retention. These fabricated devices could contribute to further understanding of selecting the right electrodes and open up new possibility of studies in the direction of resistive switching memory applications. � 2018 Elsevier B.V.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.apsusc.2018.12.124
dc.identifier.epage202
dc.identifier.scopus2-s2.0-85058619067
dc.identifier.spage194
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85058619067&doi=10.1016%2fj.apsusc.2018.12.124&partnerID=40&md5=cdd70c9f6d13054a35e71c691c3fc869
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/24689
dc.identifier.volume473
dc.publisherElsevier B.V.en_US
dc.sourceScopus
dc.sourcetitleApplied Surface Science
dc.titleMultiple resistive switching behaviours of CH 3 NH 3 PbI 3 perovskite film with different metal electrodesen_US
dc.typeArticleen_US
dspace.entity.typePublication
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