Publication:
Effects of Texturing Silicon Wafer Surfaces Using Metal-Assisted Chemical Etching (MACE) Technique

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dc.contributor.authorRazak N.H.A.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorKiong T.S.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorid54397656800en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid57216824752en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid57195441001en_US
dc.date.accessioned2023-05-29T09:07:06Z
dc.date.available2023-05-29T09:07:06Z
dc.date.issued2021
dc.descriptionAspect ratio; Electrochemical etching; Gallium alloys; Gallium arsenide; Gallium nitride; Gold deposits; Hydrofluoric acid; III-V semiconductors; Indium phosphide; Nanowires; Porosity; Porous silicon; Scanning electron microscopy; Semiconducting indium gallium arsenide; Semiconducting indium phosphide; Semiconductor alloys; Silicon solar cells; Silicon wafers; Wide band gap semiconductors; Chemical etching technique; High aspect ratio; Homo-junctions; Lattice damage; Metal-assisted chemical etching; Novel methods; Semiconductor nanostructures; Silicon nanowire and reflectance; Silicon wafer surface; Texturing silicons; Reflectionen_US
dc.description.abstractMetal-assisted Chemical Etching (MACE) is a novel method which produce high aspect ratio semiconductor nanostructures and also can produce porous silicon without create any lattice damage. This method works well on homo- and hetero-junction p-n solar cells; GaN, SiC, InP, InGaAs, GaAs, Ge and Si. Noble metal such as Ag, Pt and Au is deposited on the semiconductor surface as a catalyst. MACE is a low-cost technique and simple way to texture silicon wafer surface. This paper presents about texturing silicon wafer surfaces using metal-assisted chemical etching (MACE) technique in order to reduce reflectance on silicon solar cells surfaces by growth the well aligned silicon nanowires. In this study the fabrication of silicon nanowires is conducted at room temperature. The solutions used for this experimental study containing hydrogen peroxide (H2O2) and hydrofluoric acid (HF) in a Teflon vessel. The results shown that some of the areas on silicon wafer surfaces are not formed silicon nanowires. This is because the effects of the MACE solution whereas not etched the whole areas of silicon wafer surfaces during the process. The morphological properties of silicon nanowires on crystalline silicon wafer were observed under field emission scanning electron microscopy (FESEM) and UV-Vis Spectrophotometer is used to measured absorption and reflectance of the samples. � 2021 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1109/PVSC43889.2021.9518865
dc.identifier.epage2595
dc.identifier.scopus2-s2.0-85115940694
dc.identifier.spage2590
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85115940694&doi=10.1109%2fPVSC43889.2021.9518865&partnerID=40&md5=852197fe0a1b8a3a9d08dd62514d7323
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26139
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitleConference Record of the IEEE Photovoltaic Specialists Conference
dc.titleEffects of Texturing Silicon Wafer Surfaces Using Metal-Assisted Chemical Etching (MACE) Techniqueen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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