Publication:
Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration

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dc.citedby4
dc.contributor.authorNisham Rosly H.en_US
dc.contributor.authorDoroody C.en_US
dc.contributor.authorHarif M.N.en_US
dc.contributor.authorMohamad I.S.en_US
dc.contributor.authorIsah M.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid36873451800en_US
dc.contributor.authorid56905467200en_US
dc.contributor.authorid22634024000en_US
dc.contributor.authorid55898400600en_US
dc.contributor.authorid57219626175en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2024-10-14T03:18:17Z
dc.date.available2024-10-14T03:18:17Z
dc.date.issued2023
dc.description.abstractThe effect of a nontoxic chloride treatment on the crystallinity and optoelectrical characteristics of a CdSe thin film was studied. A detailed comparative analysis was conducted utilizing four molarities (0.01 M, 0.10 M, 0.15 M, and 0.20 M) of indium (III) chloride (InCl3), where the results showed a notable improvement in CdSe properties. The crystallite size of treated CdSe samples increased from 31.845 nm to 38.819 nm, and the strain in treated films dropped from 4.9 � 10?3 to 4.0 � 10?3, according to XRD measurements. The highest crystallinity resulted from the 0.10 M InCl3-treated CdSe films. The In contents in the prepared samples were verified by compositional analysis, and FESEM images from treated CdSe thin films demonstrated compact and optimal grain arrangements with passivated grain boundaries, which are required for the development of a robust operational solar cell. The UV-Vis plot, similarly, showed that the samples were darkened after treatment and the band gap of 1.7 eV for the as-grown samples fell to roughly 1.5 eV. Furthermore, the Hall effect results suggested that the carrier concentration increased by one order of magnitude for samples treated with 0.10 M of InCl3, but the resistivity remained in the order of 103 ohm/cm2, suggesting that the indium treatment had no considerable effect on resistivity. Hence, despite the deficit in the optical results, samples treated at 0.10 M InCl3 showed promising characteristics as well as the viability of treatment with 0.10 M InCl3 as an alternative to standard CdCl2 treatment. � 2023 by the authors.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo4108
dc.identifier.doi10.3390/ma16114108
dc.identifier.issue11
dc.identifier.scopus2-s2.0-85161579995
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85161579995&doi=10.3390%2fma16114108&partnerID=40&md5=1bf7967fd7a0d92de2022e80cd67aeac
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/34174
dc.identifier.volume16
dc.publisherMDPIen_US
dc.relation.ispartofAll Open Access
dc.relation.ispartofGold Open Access
dc.sourceScopus
dc.sourcetitleMaterials
dc.subjectcadmium selenide
dc.subjectchloride treatment
dc.subjectenergy
dc.subjectindium chloride
dc.subjectmagnetron sputtering
dc.subjectsolar cells
dc.subjectthin film
dc.subjectCadmium chloride
dc.subjectCarrier concentration
dc.subjectChlorine compounds
dc.subjectCrystallinity
dc.subjectCrystallite size
dc.subjectEnergy gap
dc.subjectGrain boundaries
dc.subjectII-VI semiconductors
dc.subjectSelenium compounds
dc.subjectThin film solar cells
dc.subjectCdSe thin films
dc.subjectChloride treatment
dc.subjectComparative analyzes
dc.subjectCristallinity
dc.subjectEnergy
dc.subjectMagnetron-sputtering
dc.subjectMolarity
dc.subjectOptoelectrical
dc.subjectOptoelectrical properties
dc.subjectThin-films
dc.subjectThin films
dc.titleOptoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentrationen_US
dc.typeArticleen_US
dspace.entity.typePublication
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