Publication:
Numerical analysis and performance study of a double-heterojunction GaAs-based solar cell

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dc.citedby3
dc.contributor.authorAl-Ezzi A.S.en_US
dc.contributor.authorAnsari M.N.M.en_US
dc.contributor.authorid57194650534en_US
dc.contributor.authorid55489853600en_US
dc.date.accessioned2025-03-03T07:44:14Z
dc.date.available2025-03-03T07:44:14Z
dc.date.issued2024
dc.description.abstractThe main objective of this paper is to present the fabrication of a flexible double-heterojunction gallium arsenide solar cell and analyse the photoelectric characteristics by experimental and numerical investigations. Remote epitaxy was used in addition to metal?organic chemical vapour deposition (MOCVD) to fabricate the flexible GaAs thin film. The practical power conversion efficiency (PCE) of the fabricated double heterojunction was nearly 20%, as tested by a solar simulator at air mass global condition AM1.5G (1000�W/m2 insolation and 25��C). The photoelectric characteristics, including the generation and recombination rates, band bending, carrier concentration and electric potential, were numerically investigated by COMSOL Multiphysics/Semiconductor Module. The experimental PCE was compared with the photovoltaic (PV) cell simulation data of 29% PCE using the MATLAB code/Newton?Raphson method. The comparison was not satisfactory, since the practical solar cell was exposed to high series resistance, which affected the PCE of the thin-film solar cell. ? The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1007/s10825-023-02126-5
dc.identifier.epage368
dc.identifier.issue2
dc.identifier.scopus2-s2.0-85186598021
dc.identifier.spage358
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85186598021&doi=10.1007%2fs10825-023-02126-5&partnerID=40&md5=dc7e30c4813cf78b71b0cd6b86c65ccc
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/36730
dc.identifier.volume23
dc.pagecount10
dc.publisherSpringeren_US
dc.sourceScopus
dc.sourcetitleJournal of Computational Electronics
dc.subjectCarrier concentration
dc.subjectConversion efficiency
dc.subjectElectric resistance
dc.subjectFabrication
dc.subjectGallium arsenide
dc.subjectHeterojunctions
dc.subjectIII-V semiconductors
dc.subjectMATLAB
dc.subjectMetallorganic chemical vapor deposition
dc.subjectOrganic chemicals
dc.subjectPhotoelectricity
dc.subjectPhotoelectrochemical cells
dc.subjectSemiconducting gallium
dc.subjectSolar cells
dc.subjectThin films
dc.subjectCOMSOL multiphysic
dc.subjectDouble heterojunctions
dc.subjectExperimental investigations
dc.subjectMetal-organic chemical vapour depositions
dc.subjectMulti-physics
dc.subjectNumerical investigations
dc.subjectPerformance study
dc.subjectPhotoelectric characteristics
dc.subjectPower conversion efficiencies
dc.subjectPower conversion efficiency
dc.subjectMultiphysics
dc.titleNumerical analysis and performance study of a double-heterojunction GaAs-based solar cellen_US
dc.typeArticleen_US
dspace.entity.typePublication
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