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Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio

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dc.citedby3
dc.contributor.authorKaharudin K.E.en_US
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorHamidon A.H.en_US
dc.contributor.authorAziz M.N.I.A.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorid56472706900en_US
dc.contributor.authorid36239165300en_US
dc.contributor.authorid26656722400en_US
dc.contributor.authorid56508975500en_US
dc.contributor.authorid12792216600en_US
dc.date.accessioned2023-05-29T06:01:11Z
dc.date.available2023-05-29T06:01:11Z
dc.date.issued2015
dc.description.abstractThe miniaturization in the size of planar MOSFET device seems to be limited when it reaches to 22nm technology node. In this paper, the vertical double gate architecture of MOSFET device with ultrathin Si- pillar was introduced by keeping both silicon dioxide (SiO2) and polysilicon as the main materials. The proposed MOSFET architecture was known as Ultrathin Pillar Vertical Double Gate (VDG) MOSFET device and it was integrated with polysilicon-on-insulator (PSOI) technology for a superior electrical performance. The virtual device fabrication and characterization were done by using ATHENA and ATLAS modules of SILVACO Internationals. The process parameters of the device were then optimized by utilizing L27 orthogonal array of Taguchi method in order to obtain the highest value of drive current (ION) and the lowest value of leakage current (IOFF). The highest value of ION/IOFF ratio after an optimization approach was observed to be 2.154x 1012. � 2015 Penerbit UTM Press. All rights reserved.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.11113/jt.v77.6602
dc.identifier.epage26
dc.identifier.issue21
dc.identifier.scopus2-s2.0-84949672076
dc.identifier.spage19
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84949672076&doi=10.11113%2fjt.v77.6602&partnerID=40&md5=2f474b41670d3267777059fd791ea9bd
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22470
dc.identifier.volume77
dc.publisherPenerbit UTM Pressen_US
dc.sourceScopus
dc.sourcetitleJurnal Teknologi
dc.titleTaguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratioen_US
dc.typeArticleen_US
dspace.entity.typePublication
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