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Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS

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dc.citedby3
dc.contributor.authorIsah M.en_US
dc.contributor.authorDoroody C.en_US
dc.contributor.authorRahman K.S.en_US
dc.contributor.authorRahman M.N.A.en_US
dc.contributor.authorGoje A.A.en_US
dc.contributor.authorSoudagar M.E.M.en_US
dc.contributor.authorKiong T.S.en_US
dc.contributor.authorMubarak N.M.en_US
dc.contributor.authorZuhdi A.W.M.en_US
dc.contributor.authorid57219626175en_US
dc.contributor.authorid56905467200en_US
dc.contributor.authorid56348138800en_US
dc.contributor.authorid57102327000en_US
dc.contributor.authorid58856415700en_US
dc.contributor.authorid57194384501en_US
dc.contributor.authorid57216824752en_US
dc.contributor.authorid36634677600en_US
dc.contributor.authorid56589966300en_US
dc.date.accessioned2025-03-03T07:41:33Z
dc.date.available2025-03-03T07:41:33Z
dc.date.issued2024
dc.description.abstractA numerical analysis of a CdTe/Si dual-junction solar cell in terms of defect density introduced at various defect energy levels in the absorber layer is provided. The impact of defect concentration is analyzed against the thickness of the CdTe layer, and variation of the top and bottom cell bandgaps is studied. The results show that CdTe thin film with defects density between 1014 and 1015�cm?3 is acceptable for the top cell of the designed dual-junction solar cell. The variations of the defect concentrations against the thickness of the CdTe layer indicate that the open circuit voltage, short circuit current density, and efficiency (?) are more affected by the defect density at higher CdTe thickness. In contrast, the Fill factor is mainly affected by the defect density, regardless of the thin film?s thickness. An acceptable defect density of up to 1015�cm?3 at a CdTe thickness of 300�nm was obtained from this work. The bandgap variation shows optimal results for a CdTe with bandgaps ranging from 1.45 to 1.7�eV in tandem with a Si bandgap of about 1.1�eV. This study highlights the significance of tailoring defect density at different energy levels to realize viable CdTe/Si dual junction tandem solar cells. It also demonstrates how the impact of defect concentration changes with the thickness of the solar cell absorber layer. ? The Author(s) 2024.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo4804
dc.identifier.doi10.1038/s41598-024-55616-2
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85186171646
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85186171646&doi=10.1038%2fs41598-024-55616-2&partnerID=40&md5=7d7c87e78ede27b11f79411e74bc9b7e
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/36198
dc.identifier.volume14
dc.publisherNature Researchen_US
dc.relation.ispartofAll Open Access; Gold Open Access; Green Open Access
dc.sourceScopus
dc.sourcetitleScientific Reports
dc.subjectarticle
dc.subjectcontrolled study
dc.subjectcurrent density
dc.subjectelectric potential
dc.subjectenergy
dc.subjectshort circuit current
dc.subjectsolar cell
dc.subjectthickness
dc.titleExploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPSen_US
dc.typeArticleen_US
dspace.entity.typePublication
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