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Robust optimization of a silicon lateral pin photodiode

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dc.citedby4
dc.contributor.authorKalthom Tasirin S.en_US
dc.contributor.authorSusthitha Menon P.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorFazlili Abdullah S.en_US
dc.contributor.authorid55602329100en_US
dc.contributor.authorid57201289731en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid14319069500en_US
dc.date.accessioned2023-12-28T06:30:12Z
dc.date.available2023-12-28T06:30:12Z
dc.date.issued2012
dc.description.abstractThe objective of this paper is to optimize the process parameters for a Si lateral p-in photodiode to obtain high responsivity, frequency response, quantum efficiency and low transient time Four process parameters were chosen, namely the intrinsic region length, photo-absorption layer thickness, the incident optical power and the bias voltage. The Taguchi method technique was used to optimize the experiment. Two noise factors were used that consist of four measurements for each row of experiment in the L9array. ATHENA and ATLAS module from Silvaco Int. were used for fabrication simulation and electrical characterization. The results obtained for responsivity, quantum efficiency, frequency response and transient time after the optimization approach were 0.62A/W, 96.37%, 13.1 GHz and 2.516 x 10-11 respectively which correspond to the optimization value for intrinsic region length of 6 ?m, photo-absorption layer thickness of 50 ?m, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the optimum solution in achieving the desired high speed photodiode was successfully predicted by using Taguchi optimization method. The percent of improvement for quantum efficientcy is 25%.en_US
dc.description.natureFinalen_US
dc.identifier.epage281
dc.identifier.issue8
dc.identifier.scopus2-s2.0-84870398422
dc.identifier.spage275
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84870398422&partnerID=40&md5=781f3241352d68a461769085a25b98ee
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/29482
dc.identifier.volume6
dc.pagecount6
dc.sourceScopus
dc.sourcetitleAustralian Journal of Basic and Applied Sciences
dc.subjectATHENA
dc.subjectATLAS
dc.subjectPhotodetector device
dc.subjectTaguchi method
dc.titleRobust optimization of a silicon lateral pin photodiodeen_US
dc.typeArticleen_US
dspace.entity.typePublication
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