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Performance analysis of tungsten disulfide (WS2) as an alternative buffer layer for CdTe solar cell through numerical modeling

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dc.citedby13
dc.contributor.authorIslam A.M.en_US
dc.contributor.authorIslam S.en_US
dc.contributor.authorSobayel K.en_US
dc.contributor.authorEmon E.I.en_US
dc.contributor.authorJhuma F.A.en_US
dc.contributor.authorShahiduzzaman M.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorRashid M.J.en_US
dc.contributor.authorid57214526127en_US
dc.contributor.authorid57213340399en_US
dc.contributor.authorid57194049079en_US
dc.contributor.authorid57221378098en_US
dc.contributor.authorid57206202019en_US
dc.contributor.authorid55640096500en_US
dc.contributor.authorid57195441001en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid56754641100en_US
dc.date.accessioned2023-05-29T09:05:51Z
dc.date.available2023-05-29T09:05:51Z
dc.date.issued2021
dc.descriptionBuffer layers; Cadmium sulfide; Cadmium sulfide solar cells; Defects; Efficiency; Interface states; Open circuit voltage; Thin film solar cells; Thin films; Transparent conducting oxides; Tungsten compounds; Zinc oxide; Band discontinuities; Cadmium telluride solar cells; CdS; Cell-be; Cell/B.E; Interface defect state; SCAPS-1D; Tungsten disulfide; Tungsten disulphide (WS2) buffer; WS$-2$; II-VI semiconductorsen_US
dc.description.abstractThe cadmium telluride (CdTe) solar cells are the most widely used high efficiency thin film solar cells that have shown stable performance over a long time. Although being a frontier in thin film technology, the performance of CdTe solar cells is setback by pinhole effects when thin CdS buffer layers are used in devices for compensating the spectral loss. To overcome this, generally, a highly resistive ZnO is used as window layer between the transparent conducting oxide (TCO) and the CdS layer. In this work, a single tungsten disulfide (WS2) is proposed to replace the bilayer window in conventional CdTe solar cells. The band discontinuities at two interfaces of the WS2 in the proposed structure (p-CdTe/n-WS2/n-ITO) are studied with varying defect state density. The performance parameters such as open circuit voltage, short circuit current, fill factor, and efficiency are observed respectively for different defect state densities of interfaces and the bulk layer of WS2. Comparison between the conventional CdTe structure and proposed structure shows that the CdTe solar cells with a single WS2 buffer layer can perform as efficiently as the one with CdS/ZnO bilayer. � 2021 Elsevier B.V.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo111296
dc.identifier.doi10.1016/j.optmat.2021.111296
dc.identifier.scopus2-s2.0-85112494826
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85112494826&doi=10.1016%2fj.optmat.2021.111296&partnerID=40&md5=5841961155fd8a2f3f9ceaa6b03eebe5
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25977
dc.identifier.volume120
dc.publisherElsevier B.V.en_US
dc.sourceScopus
dc.sourcetitleOptical Materials
dc.titlePerformance analysis of tungsten disulfide (WS2) as an alternative buffer layer for CdTe solar cell through numerical modelingen_US
dc.typeArticleen_US
dspace.entity.typePublication
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