Publication:
Work function variations on electrostatic and RF performances of JLSDGM Device

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dc.citedby1
dc.contributor.authorKaharudin K.K.E.en_US
dc.contributor.authorZain A.S.M.en_US
dc.contributor.authorRoslan A.F.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorid56472706900en_US
dc.contributor.authorid55925762500en_US
dc.contributor.authorid57203514087en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid36239165300en_US
dc.date.accessioned2023-05-29T09:06:54Z
dc.date.available2023-05-29T09:06:54Z
dc.date.issued2021
dc.description.abstractThis paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of n-channel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transistor (MOSFET). The study has been performed under othe constant level of design parameters that operates in saturation as a transconductance amplifier, considering the dependence of electrostatic and RF performance on the variation of WF. Furthermore, this paper aims to provide physical insight into the improved electrostatic and RF performances of the proposed n-JLSDGM device. The device layout and characteristics were designed and extracted respectively via a comprehensive 2-D simulation. Device performances such as on-state current (ION), off-state current (IOFF), on-off current ratio, subthreshold swing (SS), intrinsic capacitances, dynamic power dissipation (Pdyn), cut-off frequency (fT) and maximum oscillation frequency (fmax) are intensively investigated in conjunction with WF variations. � 2021 Institute of Advanced Engineering and Science. All rights reserved.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.11591/ijeecs.v23.i1.pp150-161
dc.identifier.epage161
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85109449633
dc.identifier.spage150
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85109449633&doi=10.11591%2fijeecs.v23.i1.pp150-161&partnerID=40&md5=c9ce95a689c4869c76cbb0b048eca60f
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26111
dc.identifier.volume23
dc.publisherInstitute of Advanced Engineering and Scienceen_US
dc.relation.ispartofAll Open Access, Gold, Green
dc.sourceScopus
dc.sourcetitleIndonesian Journal of Electrical Engineering and Computer Science
dc.titleWork function variations on electrostatic and RF performances of JLSDGM Deviceen_US
dc.typeArticleen_US
dspace.entity.typePublication
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