Publication:
A comprehensive modeling on MoS2 interface and defect engineering in CZTS thin film solar cells

Simple item page
dc.citedby0
dc.contributor.authorIslam M.S.en_US
dc.contributor.authorDoroody C.en_US
dc.contributor.authorKiong T.S.en_US
dc.contributor.authorabar F.I.Z.en_US
dc.contributor.authorBin Bahrudin M.S.en_US
dc.contributor.authorRahman K.S.en_US
dc.contributor.authorBoon Kar Y.en_US
dc.contributor.authorZuhdi A.W.M.en_US
dc.contributor.authorid57714001600en_US
dc.contributor.authorid56905467200en_US
dc.contributor.authorid57216824752en_US
dc.contributor.authorid59396730600en_US
dc.contributor.authorid59397510900en_US
dc.contributor.authorid56348138800en_US
dc.contributor.authorid58072938600en_US
dc.contributor.authorid56589966300en_US
dc.date.accessioned2025-03-03T07:41:40Z
dc.date.available2025-03-03T07:41:40Z
dc.date.issued2024
dc.description.abstractThis work -incorporates the SCAPS-1D modeling program toexamine the impacts of defects in the Molybdenum Disulfide (MoS2) layer and the MoS2 interface on the electrical performance of CZTS solar cells. To get an ideal energy gap (Eg) of 1.3 eV and a carrier concentration (CC) of 1014 cm??, the research attempts to optimize the CZTS absorber layer. By maintaining a consistent doping level with 1016 cm-3 � CC and an Eg within 1.6 eV < Eg � 1.8 eV for the MoS2 film, the work also investigates the possibility of increased efficiency in CZTS/MoS2 devices. The study results indicate that open circuit voltage (VOC) and Efficiency (Eta-?) parameters are improved by a p-type MoS2 interface, indicating a promising development for CZTS solar cells. Nonetheless, n-type MoS2 suggests a compromise with a reduction in the fill factor. The study emphasizes the stability benefits of a p-type MoS2 interface as well as the importance of surface recombination velocity. The study also considers phase transitions that occur during the device manufacturing, highlighting the intrinsic n-type character of MoS2 and the importance of experimental methods in CZTS device optimization. After analyzing the effects of defects on carrier density, depletion width, and quantum efficiency, the study concludes that enhancing the performance of CZTS solar cells requires an acceptor-type interface with p-type MoS2. With recombination resistances of 443.92 � cm2, 1530.33 � cm2, 81.54 � cm2, and 93.82 � cm2, the SCAPS model shows zero series resistance at a particular site for the fundamental, optimized design using n-MoS2 and p-MoS2. In the end, the work sheds light on the possibilities for additional experimental studies to advance the technology of CZTS solar cells. ? 2024 The Authorsen_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.jmrt.2024.11.016
dc.identifier.epage6609
dc.identifier.scopus2-s2.0-85208240102
dc.identifier.spage6601
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85208240102&doi=10.1016%2fj.jmrt.2024.11.016&partnerID=40&md5=c166870735d8fa52a0af5f9e6a21784c
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/36243
dc.identifier.volume33
dc.pagecount8
dc.publisherElsevier Editora Ltdaen_US
dc.relation.ispartofAll Open Access; Gold Open Access
dc.sourceScopus
dc.sourcetitleJournal of Materials Research and Technology
dc.subjectBehavioral research
dc.subjectCell engineering
dc.subjectError correction
dc.subjectHard facing
dc.subjectIndustrial research
dc.subjectSemiconductor doping
dc.subjectSilicon compounds
dc.subjectTemperature scales
dc.subjectZinc sulfide
dc.subjectComprehensive modeling
dc.subjectCZTS
dc.subjectCZTS thin films
dc.subjectDefect engineering
dc.subjectEnergy
dc.subjectInterface engineering
dc.subjectModeling
dc.subjectMoS 2
dc.subjectP-type
dc.subjectThin-films
dc.subjectLayered semiconductors
dc.titleA comprehensive modeling on MoS2 interface and defect engineering in CZTS thin film solar cellsen_US
dc.typeArticleen_US
dspace.entity.typePublication
Files
Collections
SCOPUS