Publication:
Intermetallic growth of Sn-Ag-Sb/Ni plated Cu in power packaging subject to thermal aging

dc.citedby1
dc.contributor.authorShualdi W.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorOmar G.en_US
dc.contributor.authorIsnin A.en_US
dc.contributor.authorid36194999100en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid11540084800en_US
dc.contributor.authorid24338529400en_US
dc.date.accessioned2023-12-28T07:41:47Z
dc.date.available2023-12-28T07:41:47Z
dc.date.issued2008
dc.description.abstractIntermetallic compound (IMC) growth behavior plays an important role in solder joint reliability of electronic packaging assemblies. The growth of interfacial IMC compounds and the interfacial voids/crack formation between Sn-25Ag-10Sb lead-free solders and Nickel plated Cu in power package subject to thermal aging are reported. The thicknesses of interfacial Ni-Cu-Sn IMC compounds were observed after exposed to 50, 100, 200, 400 and 800 hours aging time. The temperature for the thermal aging was kept constant at 175�C. It was noted that IMC layers grew in thickness as the thermal aging time increased. The highest IMC layer thickness was observed at 800 hours thermal aging time. At 800 hours aging time, the formation of voids was obvious and base metal-rich compound was also found at certain location probably due to grain boundary diffusion effect.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo5507783
dc.identifier.doi10.1109/IEMT.2008.5507783
dc.identifier.scopus2-s2.0-77955119406
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-77955119406&doi=10.1109%2fIEMT.2008.5507783&partnerID=40&md5=849770af6f9d10492abad77208ad0a93
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/29720
dc.sourceScopus
dc.sourcetitleProceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
dc.subjectGrain boundary diffusion
dc.subjectIntermetallic compound (IMC)
dc.subjectThermal aging
dc.subjectVoids
dc.subjectAntimony compounds
dc.subjectDiffusion
dc.subjectElectronics packaging
dc.subjectGrain boundaries
dc.subjectGrain size and shape
dc.subjectLead
dc.subjectLead compounds
dc.subjectSemiconducting intermetallics
dc.subjectSilver
dc.subjectSoldering alloys
dc.subjectThermal aging
dc.subjectAging time
dc.subjectBase metals
dc.subjectElectronic Packaging
dc.subjectGrain-boundary diffusion
dc.subjectIMC layer
dc.subjectIntermetallic compound (IMC)
dc.subjectIntermetallic compound growths
dc.subjectIntermetallic compounds
dc.subjectIntermetallic growth
dc.subjectLead free solders
dc.subjectPower package
dc.subjectPower packaging
dc.subjectSolder joint reliability
dc.subjectTin
dc.titleIntermetallic growth of Sn-Ag-Sb/Ni plated Cu in power packaging subject to thermal agingen_US
dc.typeConference paperen_US
dspace.entity.typePublication
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