Publication:
Jsc and Voc optimization of perovskite solar cell with interface defect layer using taguchi method

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dc.contributor.authorBahrudin M.S.en_US
dc.contributor.authorAbdullah S.F.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorZuhdi A.W.M.en_US
dc.contributor.authorHasani A.H.en_US
dc.contributor.authorZa'Abar F.en_US
dc.contributor.authorMalik M.en_US
dc.contributor.authorHarif M.N.en_US
dc.contributor.authorid55603412800en_US
dc.contributor.authorid14319069500en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid56589966300en_US
dc.contributor.authorid57204586055en_US
dc.contributor.authorid57204593023en_US
dc.contributor.authorid57204590565en_US
dc.contributor.authorid22634024000en_US
dc.date.accessioned2023-05-29T06:50:51Z
dc.date.available2023-05-29T06:50:51Z
dc.date.issued2018
dc.descriptionCadmium sulfide; Cadmium sulfide solar cells; Copper compounds; Cost effectiveness; Defects; Efficiency; Electric network analysis; Electron transport properties; II-VI semiconductors; Microelectronics; Open circuit voltage; Perovskite; Perovskite solar cells; Solar absorbers; Sulfur compounds; Taguchi methods; Tellurium compounds; Device simulations; Electron transport layers; Hole transport layers; Interface defects; L9 orthogonal arrays; Photonic structure; Solar cell absorbers; Taguchi optimizations; Solar cellsen_US
dc.description.abstractThis paper is a study on Perovskite Solar Cell to optimize open circuit voltage, Vocand short circuit current density, Jscfor maximum efficiency at variation depth of interface defect layer (IDL). The Perovskite Solar Cell structure is simulated with combinations of IDL at 6nm, 8nm and 10nm of thickness sandwiches on both side of the solar cell absorber layer. Taguchi Method using L9 Orthogonal Array with Larger-The-Better (LTB) was used on finding most effective value on three material parameters: Cadmium Sulfide (CdS) as an electron transport layer (ETL), Perovskite absorber layer (CH3NH3Pbl3) and Copper Telluride (CuTe) as hole transport layer (HTL) in order to achieved best Voc and Jscvalues. The works was done by simulating a numerical model using Analysis Of Microelectronic and Photonic Structures (AMPS-ID) software. Using ANOVA, it was discovered the Perovskite absorber layer thickness is vital in affecting the increasing and decreasing on both Vocand Jsc. Taguchi predicted a 200nm of thickness for best Jsc but predicted 300nm for best Voc. The thickness of 200nm is selected for cost effectiveness. Taguchi method also predicted CdS and CuTe are considered slightly significant on improving the efficiency. Post Taguchi optimization approach shows Perovskite Solar Cell with CH3NH3Pbl3absorber layer has average power conversion efficiency of 20.7% on any combination of mentioned IDL thickness. With the aid of Taguchi method, a stable Perovskite Solar Cell efficiency with variation IDL thickness is achieved. � 2018 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo8481203
dc.identifier.doi10.1109/SMELEC.2018.8481203
dc.identifier.epage196
dc.identifier.scopus2-s2.0-85056259275
dc.identifier.spage192
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85056259275&doi=10.1109%2fSMELEC.2018.8481203&partnerID=40&md5=784a003e9a132e90a1dc2cf58d2e5cbf
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23662
dc.identifier.volume2018-August
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitleIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
dc.titleJsc and Voc optimization of perovskite solar cell with interface defect layer using taguchi methoden_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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