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Impact of high-k insulators on electrical properties of junctionless double gate strained transistor

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dc.citedby0
dc.contributor.authorKaharudin K.E.en_US
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorZain A.S.M.en_US
dc.contributor.authorJalaludin N.A.en_US
dc.contributor.authorArith F.en_US
dc.contributor.authorJunos S.A.M.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorid56472706900en_US
dc.contributor.authorid36239165300en_US
dc.contributor.authorid55925762500en_US
dc.contributor.authorid58861184200en_US
dc.contributor.authorid55799799900en_US
dc.contributor.authorid36241712600en_US
dc.contributor.authorid12792216600en_US
dc.date.accessioned2025-03-03T07:41:24Z
dc.date.available2025-03-03T07:41:24Z
dc.date.issued2024
dc.description.abstractHigh-k dielectric insulators are required to reduce leakage and increase transistor performance. They are able to impact the mobility of carriers in transistors positively, leading to better device performance in advanced transistor architecture. Nevertheless, an in-depth analysis of how high-k dielectric insulators influence transistor characteristics must be carried out to determine their suitability. The objective of this study is to investigate the impact of high-k insulators towards electrical properties of junctionless double gate strained transistor. The simulation works is done using process/device simulator Silvaco Athena/Atlas. Based on the retrieved results, the magnitude of ION, on-off ratio, gm, and Cint for TiO2-based device are approximately 63%, 99%, 62%, and 89% respectively higher than the lowest permittivity material-based device. The TiO2-based device also exhibits the lowest magnitude in IOFF and SS compared to others. However, a significant degradation in fT magnitude have been observed for TiO2-based device significantly due to its large capacitances. ? 2024 Institute of Advanced Engineering and Science. All rights reserved.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.11591/ijeecs.v36.i3.pp1437-1447
dc.identifier.epage1447
dc.identifier.issue3
dc.identifier.scopus2-s2.0-85205506959
dc.identifier.spage1437
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85205506959&doi=10.11591%2fijeecs.v36.i3.pp1437-1447&partnerID=40&md5=406675ee9f9225e40352a2bd3ad3ef81
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/36114
dc.identifier.volume36
dc.pagecount10
dc.publisherInstitute of Advanced Engineering and Scienceen_US
dc.sourceScopus
dc.sourcetitleIndonesian Journal of Electrical Engineering and Computer Science
dc.titleImpact of high-k insulators on electrical properties of junctionless double gate strained transistoren_US
dc.typeArticleen_US
dspace.entity.typePublication
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