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Effects of sulfurization temperature on structural, morphological, and optoelectronic properties of CTS thin films solar cells

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dc.citedby3
dc.contributor.authorHossain E.S.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorShahahmadi S.A.en_US
dc.contributor.authorFerdaous M.T.en_US
dc.contributor.authorBais B.en_US
dc.contributor.authorTiong S.K.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid57196058952en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid55567116600en_US
dc.contributor.authorid55567613100en_US
dc.contributor.authorid9638472600en_US
dc.contributor.authorid15128307800en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T06:50:53Z
dc.date.available2023-05-29T06:50:53Z
dc.date.issued2018
dc.description.abstractCu2 SnS3 (CTS) thin films were fabricated by two-step process: deposition of precursor by RF magnetron sputtering, and subsequent sulfurization at different temperatures. The influence of sulfurization temperatures on the structural, morphological, optical, and electrical properties was investigated to find out the optimum growth route for CTS formation kinetics. All prepared samples were found Sn-rich by the EDX compositional analysis. Structural analysis confirmed the CTS formation with the impurity phase of Cu4 Sn7 S16 at lower temperature, and Sn2 S3 at higher sulfurization temperature. Crystallite size of these films was found to increase from 53.2 to 61.3 nm with increasing the sulfurization temperatures from 520 to 580 �C. The same trend was also observed for the grain size in the morphological analysis. Bandgap was varied from 0.87 to 0.92 eV, as the sulfurization temperature increased from 520 to 580 �C. Carrier concentration was found to decline with increasing sulfurization temperature while mobility and resistivity showed a progressive increment at higher temperatures. � 2018, S.C. Virtual Company of Phisics S.R.L. All rights reserved.en_US
dc.description.natureFinalen_US
dc.identifier.epage507
dc.identifier.issue10
dc.identifier.scopus2-s2.0-85056350812
dc.identifier.spage499
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85056350812&partnerID=40&md5=bd5bfb1efed31c7dcb8735ae82c44041
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23668
dc.identifier.volume15
dc.publisherS.C. Virtual Company of Phisics S.R.Len_US
dc.sourceScopus
dc.sourcetitleChalcogenide Letters
dc.titleEffects of sulfurization temperature on structural, morphological, and optoelectronic properties of CTS thin films solar cellsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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