Publication:
Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methods

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dc.citedby1
dc.contributor.authorRoslan A.F.en_US
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorM Zain A.S.en_US
dc.contributor.authorMansor N.en_US
dc.contributor.authorKaharudin K.E.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorHazura H.en_US
dc.contributor.authorHanim A.R.en_US
dc.contributor.authorIdris S.K.en_US
dc.contributor.authorZaiton A.M.en_US
dc.contributor.authorZarina B.Z.en_US
dc.contributor.authorMohamad N.R.en_US
dc.contributor.authorA Hamid A.M.en_US
dc.contributor.authorid57203514087en_US
dc.contributor.authorid36239165300en_US
dc.contributor.authorid57204976577en_US
dc.contributor.authorid57511094100en_US
dc.contributor.authorid56472706900en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid35108985200en_US
dc.contributor.authorid57193616206en_US
dc.contributor.authorid57202632295en_US
dc.contributor.authorid36069361000en_US
dc.contributor.authorid57204975604en_US
dc.contributor.authorid55383652800en_US
dc.contributor.authorid57204976414en_US
dc.date.accessioned2023-05-29T06:50:06Z
dc.date.available2023-05-29T06:50:06Z
dc.date.issued2018
dc.descriptionFinFET; Leakage currents; Polycrystalline materials; Polysilicon; Semiconductor doping; Taguchi methods; Threshold voltage; Comparative analysis; Design and optimization; Electrical characterization; International Technology Roadmap for Semiconductors; Optimization approach; Process parameter variations; Subthreshold voltages; Threshold voltages (Vth); Statistical methodsen_US
dc.description.abstractThis paper investigates on the design and optimization of the input process parameter variations in Double Gate FinFET (DG-FinFET) device through comparisons between two different statistical methods through Taguchi and 2-k factorial design. This research focuses on the effects on threshold voltage (V TH ), leakage current (I OFF ), drive current (I ON ), and the subthreshold voltage (SS) towards various parameter variations. The fabrication of the device as well as its electrical characterization are both performed using TCAD simulator, specifically ATHENA and ATLAS modules. Optimization of the process parameters is implemented and merged with the aforementioned modules. The comparisons are also conducted for the Taguchi and 2-k factorial design, statistical methods after implementation is done for both. The optimum condition for the process parameters are obtained with Polysilicon Doping Dose at Level 3 (3.7E14 atom/cm 3 ), Polysilicon Doping Tilt at Level 3 (-17�), Source/Drain Doping Tilt at Level 1 (73�) and Threshold Voltage Doping dose at Level 2 (1.95E13 atom/cm 3 ). The S/N ratio of Threshold Voltage, Leakage Current, Drive Current and Subthreshold Voltage values are in the predicted range of the International Technology Roadmap for Semiconductors (ITRS) 2015 prediction. Based on comparisons made, optimization approach works best and most suitable with the Taguchi method due to the consideration of noise factor used in the orthogonal array, despite the fact that both Taguchi and 2-k factorial design process is able to produce optimum solutions that are within the desired values. � Published under licence by IOP Publishing Ltd.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo12048
dc.identifier.doi10.1088/1742-6596/1123/1/012048
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85058240175
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85058240175&doi=10.1088%2f1742-6596%2f1123%2f1%2f012048&partnerID=40&md5=1e90e2f0bfc5f4ab2a07692541ab9278
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23529
dc.identifier.volume1123
dc.publisherInstitute of Physics Publishingen_US
dc.relation.ispartofAll Open Access, Bronze
dc.sourceScopus
dc.sourcetitleJournal of Physics: Conference Series
dc.titleComparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methodsen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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