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Electrode dependence in halide perovskite memories: resistive switching behaviours

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dc.contributor.authorThien G.S.H.en_US
dc.contributor.authorSarjidan M.A.M.en_US
dc.contributor.authorTalik N.A.en_US
dc.contributor.authorGoh B.T.en_US
dc.contributor.authorYap B.K.en_US
dc.contributor.authorHe Z.en_US
dc.contributor.authorChan K.-Y.en_US
dc.contributor.authorid56152438600en_US
dc.contributor.authorid35178150000en_US
dc.contributor.authorid55576358000en_US
dc.contributor.authorid24398718100en_US
dc.contributor.authorid26649255900en_US
dc.contributor.authorid57914899800en_US
dc.contributor.authorid15064967600en_US
dc.date.accessioned2023-05-29T09:36:30Z
dc.date.available2023-05-29T09:36:30Z
dc.date.issued2022
dc.descriptionLight absorption; Perovskite; Absorption characteristics; Design structure; Halide perovskites; Laser lights; Lightemitting diode; Performance; Photovoltaics; Resistive switching; Resistive switching behaviors; Switching properties; Electrodesen_US
dc.description.abstractHalide perovskites (HPs) are widely employed in a variety of applications including optoelectronics, lasers, light-emitting diodes, and photovoltaics. As HPs are superb semiconductors with remarkable electronic and light absorption characteristics, global research into these materials is flourishing in various industries. Thus, memory devices have lately seen a growth in the usage of HPs as a next-generation candidate for high-performance memories. Nonetheless, understanding the impact of design structure on HP memories, such as electrode dependence in producing different resistive switching (RS) properties, is critical in optimizing the design process. This review describes the top electrode (TE) dependence of various materials in creating diverse RS memory behaviour. The disparities in all recently reported RS characteristics based on different TE materials are addressed and explored. Current electrode modification advances and techniques in HP RS devices are also discussed. Through this, the relevance and importance of electrode dependence in the design architecture of HP memories toward RS mechanisms are highlighted in this review work. � 2022 The Royal Society of Chemistry.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1039/d2qm00614f
dc.identifier.epage3142
dc.identifier.issue21
dc.identifier.scopus2-s2.0-85139181941
dc.identifier.spage3125
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85139181941&doi=10.1039%2fd2qm00614f&partnerID=40&md5=d000b226a1aa41ce0fb44840e0193495
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26749
dc.identifier.volume6
dc.publisherRoyal Society of Chemistryen_US
dc.sourceScopus
dc.sourcetitleMaterials Chemistry Frontiers
dc.titleElectrode dependence in halide perovskite memories: resistive switching behavioursen_US
dc.typeReviewen_US
dspace.entity.typePublication
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