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Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

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dc.citedby3
dc.contributor.authorSahari S.K.en_US
dc.contributor.authorKashif M.en_US
dc.contributor.authorSutan N.M.en_US
dc.contributor.authorEmbong Z.en_US
dc.contributor.authorNik Zaini Fathi N.A.F.en_US
dc.contributor.authorHamzah A.A.en_US
dc.contributor.authorSapawi R.en_US
dc.contributor.authorMajlis B.Y.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorid16022924700en_US
dc.contributor.authorid57221166609en_US
dc.contributor.authorid7801574648en_US
dc.contributor.authorid57190288286en_US
dc.contributor.authorid57194149316en_US
dc.contributor.authorid12792679600en_US
dc.contributor.authorid16023080700en_US
dc.contributor.authorid6603071546en_US
dc.contributor.authorid12792216600en_US
dc.date.accessioned2023-05-29T06:40:34Z
dc.date.available2023-05-29T06:40:34Z
dc.date.issued2017
dc.descriptionChemical cleaning; Deposition; Field effect transistors; Germanium oxides; Growth kinetics; Hafnium; Metal insulator boundaries; Photoelectrons; Photons; Sputtering; X ray photoelectron spectroscopy; Deposition time; Design/methodology/approach; Equivalent oxide thickness; Ge substrates; Interfacial layer; Metal insulators; Post-oxidation annealing; Rf-sputtering; Germaniumen_US
dc.description.abstractPurpose -The quality of GeOx-Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al2O3 on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al2O3 and Ge for HCl-And HF-last Ge surface. Design/methodology/approach -After wet chemical cleaning with HCl or HF, Al2O3 was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-Anneal deposition at 400�C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively. Findings - It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF-And HCl-last starting surface. Originality/value -The novelty of this work is to investigate the starting surface of Ge to IL growth between Al2O3/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1108/MI-12-2015-0099
dc.identifier.epage68
dc.identifier.issue2
dc.identifier.scopus2-s2.0-85018869374
dc.identifier.spage64
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85018869374&doi=10.1108%2fMI-12-2015-0099&partnerID=40&md5=a8ed3fe5f74dab9ba6b24d514c59ac84
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23448
dc.identifier.volume34
dc.publisherEmerald Group Publishing Ltd.en_US
dc.relation.ispartofAll Open Access, Green
dc.sourceScopus
dc.sourcetitleMicroelectronics International
dc.titleGrowth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germaniumen_US
dc.typeArticleen_US
dspace.entity.typePublication
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