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High-Aspect-Ratio Silicon Nanostructures on N-type Silicon Wafer Using Metal-Assisted Chemical Etching (MACE) Technique

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dc.contributor.authorRazak N.H.A.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorKiong T.S.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorid54397656800en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid57216824752en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid57195441001en_US
dc.date.accessioned2023-05-29T09:07:06Z
dc.date.available2023-05-29T09:07:06Z
dc.date.issued2021
dc.descriptionAspect ratio; Catalysts; Etching; Hydrofluoric acid; Light; Metals; Photons; Porosity; Silicon solar cells; Silicon wafers; Surface roughness; Textures; Chemical etching technique; High aspect ratio; High aspect ratio microstructures; Metal-assisted chemical etching; Nanowire formation; Roughness parameters; Silicon microstructures; Silicon nano structure (SiNS); Silicon wafer surface; Solar cell and reflectance; Nanowiresen_US
dc.description.abstractIn this paper, silicon nanowires formation on N-type crystalline silicon wafer is studied. Metal-assisted chemical etching (MACE) technique is used in this study because it's low cost but can produce a high-aspect-ratio of silicon nanowires. High-aspect-ratio silicon nanostructures have been proved as an effective texture for light trapping on silicon solar cells surfaces. The photons from incident light can be trap on the silicon nanowires and then being absorb into the cells which resulting high efficiency silicon solar cells. Traditionally, MACE works by creating a holes using metal catalyst such as Ag or Au in order to reduce of the etchant. The hydrofluoric acid (HF) and hydrogen peroxide (H2O2) are function to etched the metal native oxide thus create a pores or nanowires formation. Roughness parameters of silicon nanowires was investigate in order to see the texture of silicon nanowires is rough enough to trap more photons on silicon wafer surfaces. Hence, roughness parameters are very important for texturing silicon wafer surfaces. In this study, root mean square (RMS) is used as an indicators for which acquired from the line profiles. Results from the roughness parameters shown a good compatibility. � 2021 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1109/PVSC43889.2021.9518597
dc.identifier.epage2599
dc.identifier.scopus2-s2.0-85115975509
dc.identifier.spage2596
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85115975509&doi=10.1109%2fPVSC43889.2021.9518597&partnerID=40&md5=678dd0d47b799efc7383f3cafa7d71ed
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26138
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitleConference Record of the IEEE Photovoltaic Specialists Conference
dc.titleHigh-Aspect-Ratio Silicon Nanostructures on N-type Silicon Wafer Using Metal-Assisted Chemical Etching (MACE) Techniqueen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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