Publication:
Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor

Simple item page
dc.citedby18
dc.contributor.authorAfifah Maheran A.H.en_US
dc.contributor.authorMenon P.S.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorShaari S.en_US
dc.contributor.authorid36570222300en_US
dc.contributor.authorid57201289731en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid6603595092en_US
dc.date.accessioned2023-05-16T02:48:19Z
dc.date.available2023-05-16T02:48:19Z
dc.date.issued2014
dc.description.abstractThis paper reports on the effects of the Halo structure variations on threshold voltage (Vth) in a 22 nm gate length high-k/metal gate planar NMOS transistor. Since the Vth is one of the important physical parameter for determining the functionality of complementary metal-oxide-semiconductor device, this experiment will focus on finding the best combination on process parameter to achieve the best value of Vth. The Halo structure variable process parameters are the Halo implantation dose, the Halo implantation tilting angle, the Source/Drain implantation dose and the compensation implantation dose. The design of the planar device consists of a combination of high permittivity material (high-k) and a metal gate. Titanium dioxide was used as the high-k material instead of the traditional SiO 2 dielectric and tungsten silicide was used as the metal gate. The optimization process was executed using Taguchi's L9 array to obtain a robust design. Taguchi's Nominal-the-Best signal-to-noise ratio was used in an effort to minimize the variance of Vth. The results show that the Vth values have least variance and the mean value can be adjusted to 0.289 V±12.7% which is in line with projections made by the International Technology Roadmap for Semiconductors. © 2013 Elsevier Ltd. All rights reserved.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.mssp.2013.09.009
dc.identifier.epage161
dc.identifier.scopus2-s2.0-84885671344
dc.identifier.spage155
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84885671344&doi=10.1016%2fj.mssp.2013.09.009&partnerID=40&md5=2846d24fc316e0b83660fcddcfd15e86
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22195
dc.identifier.volume17
dc.sourceScopus
dc.sourcetitleMaterials Science in Semiconductor Processing
dc.titleEffect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistoren_US
dc.typeArticleen_US
dspace.entity.typePublication
Files
Collections
SCOPUS