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Bandgap shifting and crystalline quality of rf-sputtered intrinsic-zno nanofilm for tfsc application

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dc.contributor.authorHusna J.en_US
dc.contributor.authorMenon P.S.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorSampe J.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorTripathy S.K.en_US
dc.contributor.authorLenka T.R.en_US
dc.contributor.authorMd. Zain A.R.en_US
dc.contributor.authorMohamed M.A.en_US
dc.contributor.authorid55485141800en_US
dc.contributor.authorid57201289731en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid23095535500en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid55347524000en_US
dc.contributor.authorid35731935800en_US
dc.contributor.authorid56109090300en_US
dc.contributor.authorid57581478900en_US
dc.date.accessioned2023-05-29T08:11:47Z
dc.date.available2023-05-29T08:11:47Z
dc.date.issued2020
dc.description.abstractIntrinsic Zinc Oxide (i-ZnO) is a promising material and has been applied in many types of solar cell structures, and particularly in thin film solar cells (TFSC) where it is normally used as the n-type layer or as normally addressed, the buffer or window layer. In this work, ZnO nanofilm was deposited by radio frequency (RF) sputtering technique and the thickness was varied in the range of 50 to 200 nm. The overall results show that the average transmission of i-ZnO was over 70% and the band gap (Eg) obtained was in the range of 3.14 eV-3.25 eV for all nanofilms. Meanwhile, for the structural results, it was clearly shown that the crystalline size of the nanofilms have good quality, and all ZnO films exhibited a (002) diffraction peak, proving the crystallinity of the films via x-ray diffraction (XRD) data analysis. The results assume that the ZnO with various thicknesses deposited with this technique were in accordance with its expected properties and is acceptable to be utilized in TFSC application as a buffer or window layer. � 2020, Universiti Malaysia Perlis. All rights reserved.en_US
dc.description.natureFinalen_US
dc.identifier.epage10
dc.identifier.issueSpecial issue NANOSYM 2019
dc.identifier.scopus2-s2.0-85103655225
dc.identifier.spage1
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85103655225&partnerID=40&md5=b5ac98c7d00716959c55c613c62eb50c
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25620
dc.identifier.volume13
dc.publisherUniversiti Malaysia Perlisen_US
dc.sourceScopus
dc.sourcetitleInternational Journal of Nanoelectronics and Materials
dc.titleBandgap shifting and crystalline quality of rf-sputtered intrinsic-zno nanofilm for tfsc applicationen_US
dc.typeArticleen_US
dspace.entity.typePublication
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