Publication:
Simulation and Optimization of Emitter Thickness for Indium Arsenide-Based Thermophotovoltaic Cell

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dc.citedby4
dc.contributor.authorWong B.W.A.en_US
dc.contributor.authorGamel M.M.A.en_US
dc.contributor.authorLee H.J.en_US
dc.contributor.authorRashid W.E.en_US
dc.contributor.authorYao L.K.en_US
dc.contributor.authorJern K.P.en_US
dc.contributor.authorid57215329405en_US
dc.contributor.authorid57215306835en_US
dc.contributor.authorid57190622221en_US
dc.contributor.authorid57204586520en_US
dc.contributor.authorid56903550000en_US
dc.contributor.authorid37461740800en_US
dc.date.accessioned2023-05-29T07:24:04Z
dc.date.available2023-05-29T07:24:04Z
dc.date.issued2019
dc.descriptionCells; Cytology; Efficiency; III-V semiconductors; Indium; Infrared radiation; Nanoelectronics; Narrow band gap semiconductors; Open circuit voltage; Electrical characteristic; III-IV semiconductors; InAs; Silvaco; Simulation and optimization; Thermophoto voltaic cells; Thermophotovoltaic devices; Thickness; Indium arsenideen_US
dc.description.abstractThermophotovoltaic (TPV) devices are known for capturing infrared radiation from a high temperature heat source and converting them into electricity. While InAs TPV cells have the ability to harvest radiation heat from temperature source below 1000 K, the best-reported homojunction InAs efficiency is only 0.6 % under 1000 K. This is due to the lack of an optimize structure for TPV application. This research work investigates on optimizing the emitter thickness for Indium Arsenide (InAs) based TPV cells. The electrical characteristics of the InAs TPV cell were simulated using the SILVACO TCAD software. The thickness of p-type emitter ranging from 0.1 to 2.3\ \boldsymbol{\mu} \mathbf{m} were investigated. As the emitter thickness increases, the open circuit voltage (\boldsymbol{V-{oc}}) increases, while the short-circuit current density (\boldsymbol{J-{sc}}) decreases. With the increase rate of \boldsymbol{V-{oc}} which is faster than the decreasing rate of \boldsymbol{J-{sc}}, the maximum power efficiency was achieved at an optimum thickness of 1.5\ \boldsymbol{\mu} \mathbf{m}. At 800 �C blackbody temperature, the highest power efficiency was acquired as 0.61 % at the optimum emitter thickness. � 2019 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo8943553
dc.identifier.doi10.1109/RSM46715.2019.8943553
dc.identifier.epage136
dc.identifier.scopus2-s2.0-85078299166
dc.identifier.spage133
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85078299166&doi=10.1109%2fRSM46715.2019.8943553&partnerID=40&md5=d92591347ff72fdba64ccb003271df96
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/24507
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitleProceedings of the 2019 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2019
dc.titleSimulation and Optimization of Emitter Thickness for Indium Arsenide-Based Thermophotovoltaic Cellen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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