Publication:
Metallurgical bond integrity of C45 ultra fine pitch with 18m copper wire

Simple item page
dc.citedby1
dc.contributor.authorKid W.B.en_US
dc.contributor.authorLeng E.P.en_US
dc.contributor.authorSeong L.B.en_US
dc.contributor.authorWeily C.en_US
dc.contributor.authorKar Y.B.en_US
dc.contributor.authorid36992192300en_US
dc.contributor.authorid26423002500en_US
dc.contributor.authorid36004755800en_US
dc.contributor.authorid36992593400en_US
dc.contributor.authorid26649255900en_US
dc.date.accessioned2023-12-29T07:46:58Z
dc.date.available2023-12-29T07:46:58Z
dc.date.issued2011
dc.description.abstractNowadays, increasing of gold price and decreasing of dielectric let copper and low-k dielectric materials become a new technology and are increasingly chosen as preferred interconnect insulated material in semiconductor applications. In this paper, a C45 ultra low k wafer technology with bond-over-active bond pads, on a thermally enhanced BGA package with 3131mm large body size is selected to study. Aluminum wire type, bonding capillary, and wire bonding parameters, were selected as critical factors in this study. Both were used for bonding parameters optimization. Critical responses such as ball size, ball height/bonded ball diameter ratio, wire pull strength, ball shear strength, and wire peel strength were studied to understand the wire bonding effect of C45 ultra low k and 40m pad pitch. Analysis between copper and gold wire were performed for comparison purpose at different thermal aging read point. The thermal aging read point were studied at 175�C for 168, 504 and 1008 hours while at temperature of 225�C for 4.5, 13.5, 26, 52 and 97 hours respectively. This is used to study the IMC thickness of Cu-Al. To investigate the effects of IMC formation on the copper wire on Al pad, wire pull, wire peel and ball shear test has to be construct. � 2011 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo6088332
dc.identifier.doi10.1109/RSM.2011.6088332
dc.identifier.epage240
dc.identifier.scopus2-s2.0-83755196507
dc.identifier.spage236
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-83755196507&doi=10.1109%2fRSM.2011.6088332&partnerID=40&md5=9123a3d969ccf9708f5963f9a3a80acf
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/30349
dc.pagecount4
dc.sourceScopus
dc.sourcetitle2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts
dc.subjectCopper
dc.subjectDielectric materials
dc.subjectGold
dc.subjectIntermetallics
dc.subjectShear flow
dc.subjectSpheres
dc.subjectThermal aging
dc.subjectAluminum wires
dc.subjectBall diameter
dc.subjectBall shear strength
dc.subjectBall size
dc.subjectBall-shear test
dc.subjectBGA package
dc.subjectBody sizes
dc.subjectBond pad
dc.subjectBonding capillary
dc.subjectBonding parameters
dc.subjectCopper wires
dc.subjectCritical factors
dc.subjectCritical response
dc.subjectGold prices
dc.subjectGold wire
dc.subjectIMC thickness
dc.subjectInsulated materials
dc.subjectLow-k dielectric materials
dc.subjectMetallurgical bonds
dc.subjectPeel strength
dc.subjectSemiconductor applications
dc.subjectUltra fine pitch
dc.subjectUltra low-k
dc.subjectWafer technology
dc.subjectWire bonding
dc.subjectWire pull strength
dc.subjectWire
dc.titleMetallurgical bond integrity of C45 ultra fine pitch with 18m copper wireen_US
dc.typeConference paperen_US
dspace.entity.typePublication
Files
Collections
SCOPUS