Publication:
Performance Comparison of Narrow Bandgap Semiconductor Cells for Photovoltaic and Thermophotovoltaic Applications

Simple item page
dc.citedby4
dc.contributor.authorGamel M.M.A.en_US
dc.contributor.authorKer P.J.en_US
dc.contributor.authorLee H.J.en_US
dc.contributor.authorRashid W.E.S.W.A.en_US
dc.contributor.authorJamaludin M.Z.en_US
dc.contributor.authorMohammed A.I.A.en_US
dc.contributor.authorid57215306835en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid57190622221en_US
dc.contributor.authorid57204586520en_US
dc.contributor.authorid57216839721en_US
dc.contributor.authorid57219573168en_US
dc.date.accessioned2023-05-29T08:10:05Z
dc.date.available2023-05-29T08:10:05Z
dc.date.issued2020
dc.descriptionCells; Cytology; Energy gap; Gallium; Gallium arsenide; III-V semiconductors; Indium; Indium arsenide; Infrared radiation; Narrow band gap semiconductors; Photocurrents; Photonics; Semiconducting antimony compounds; Semiconducting germanium; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconductor alloys; Comparative studies; Illumination spectrum; Indium gallium arsenide; Performance comparison; Radiation temperature; Surface recombinations; Thermophotovoltaic applications; Thermophotovoltaics; Solar cellsen_US
dc.description.abstractNarrow bandgap (NB) materials provide better potential for infrared radiation conversion to electricity from solar or various thermophotovoltaic (TPV) spectrums. Different NB materials generate diverse output performance depending on the properties of materials crystal and cell configuration. Decreasing the bandgap of the materials will improve the collection of longer wavelength photons, but that tends to increase the recombination rate and reduce cell efficiency (?). This paper investigates the performance of NB cells. Silvaco TCAD software was used to simulate the output performance of germanium (Ge), indium arsenide (InAs), gallium antimonide (GaSb), and indium gallium arsenide (InGaAs) cells under solar spectrum AM1.5 and 1000 K illumination spectrums. It was found that InGaAs is the most outstanding material for photovoltaic (PV) application and TPV application at 1000 K radiation temperature. The comparative study and conclusion drawn in this work highlight several limitations in NB cells configuration, such as the high surface recombination rate in GaSb and InAs TPV cell, which reduces photocurrent collection. � 2020 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo9206452
dc.identifier.doi10.1109/ICP46580.2020.9206452
dc.identifier.epage43
dc.identifier.scopus2-s2.0-85093979403
dc.identifier.spage42
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85093979403&doi=10.1109%2fICP46580.2020.9206452&partnerID=40&md5=518b68a7ae5fc30aefbb95b94fdd879b
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25491
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitle2020 IEEE 8th International Conference on Photonics, ICP 2020
dc.titlePerformance Comparison of Narrow Bandgap Semiconductor Cells for Photovoltaic and Thermophotovoltaic Applicationsen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
Files
Collections
SCOPUS