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Identifying the photon absorption characteristics of Cr-doped Cu2ZnSnS4 (CZTS:Cr) thin film deposited by Co-sputtering technique

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dc.citedby1
dc.contributor.authorSapeli M.M.I.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorHossain M.I.en_US
dc.contributor.authorSajedur Rahman K.en_US
dc.contributor.authorYusoff Y.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid57201282111en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid36448414000en_US
dc.contributor.authorid56348138800en_US
dc.contributor.authorid57206844407en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2024-10-14T03:17:21Z
dc.date.available2024-10-14T03:17:21Z
dc.date.issued2023
dc.description.abstractThis study investigates the potential of a quaternary compound semiconductor to be realized as the absorber layer for third-generation intermediate band solar cells (IBSCs). In this work, the effects of Cr doping into Cu2ZnSnS4 (CZTS) host material to form intermediate band within the forbidden bandgap were studied. The films were deposited by a co-sputtering technique. It has been found that Cr has a high preference to substitute Zn, followed by Sn, then Cu. Insufficient Cr does not lead to intermediate band but, instead, forms defect states within the bandgap. Excess Cr however deteriorates CZTS (112) peak while at the same time secondary phase of cubic-ZnCr2S4 starts to grow. At sufficient levels of Cr content, absorption coefficient tremendously improved to 105 cm?1, resulting in an additional absorption peak attributed to possible formation of an intermediate band. This intermediate band is located at 1.40 � 0.02 eV below CBM, while the band gap Eg is 1.55 eV. Further optimization to the sulphurization process reveals that the intermediate band peak, ECIL could be adjusted towards blue or red shift by manipulating Cr and/or sulphur content. This yields a bandgap of 1.52 eV with two intermediate bands positioned at 0.90 eV and 1.20 eV above the VBM. These preliminary findings are beneficial prior to realizing a working device of CZTS:Cr intermediate band solar cell. � 2023 Elsevier B.V.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo114528
dc.identifier.doi10.1016/j.optmat.2023.114528
dc.identifier.scopus2-s2.0-85175367151
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85175367151&doi=10.1016%2fj.optmat.2023.114528&partnerID=40&md5=876948e9bd8d4c395bb422b9bbe097f7
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/33867
dc.identifier.volume146
dc.publisherElsevier B.V.en_US
dc.sourceScopus
dc.sourcetitleOptical Materials
dc.subjectCo-sputtering
dc.subjectCr doping
dc.subjectCZTS thin film
dc.subjectIntermediate band
dc.subjectCopper compounds
dc.subjectDefect states
dc.subjectRed Shift
dc.subjectSemiconductor doping
dc.subjectSolar cells
dc.subjectSputtering
dc.subjectThin films
dc.subjectZinc compounds
dc.subjectAbsorption characteristics
dc.subjectCo-sputtering techniques
dc.subjectCosputtering
dc.subjectCr-doped
dc.subjectCr-doping
dc.subjectCZTS thin films
dc.subjectIntermediate bands
dc.subjectIntermediate-band solar cells
dc.subjectPhotons absorption
dc.subjectThin-films
dc.subjectTin compounds
dc.titleIdentifying the photon absorption characteristics of Cr-doped Cu2ZnSnS4 (CZTS:Cr) thin film deposited by Co-sputtering techniqueen_US
dc.typeArticleen_US
dspace.entity.typePublication
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