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Search of Potential Dopants and its Effect on TiO2-Based Low Voltage Varistor Materials

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dc.citedby0
dc.contributor.authorBegum S.en_US
dc.contributor.authorKothandapani Z.en_US
dc.contributor.authorHashmi M.S.J.en_US
dc.contributor.authorid57216608034en_US
dc.contributor.authorid55786763900en_US
dc.contributor.authorid36501681300en_US
dc.date.accessioned2024-10-14T03:20:13Z
dc.date.available2024-10-14T03:20:13Z
dc.date.issued2023
dc.description.abstractVaristors are electroceramic devices used as surge protectors for electrical and electronic systems. At present low-voltage varistors are in demand due to miniaturization of the microelectronic circuits. In this research, the electrical properties of titanium dioxide (TiO2) doped with tantalum pentoxide (Ta2O5), tungsten trioxide (WO3), silicon dioxide (SiO2) and bismuth oxide (Bi2O3) and fired at different temperatures were investigated for low voltage applications. The adequate amount of dopants at suitable sintering temperature had beneficial effect in improving the properties of TiO2. High green and fired density, high Vickers hardness and compressive strength were achieved with the composition of 0.5% SiO2, 0.5% Ta2O5, 0.25% WO3, and 0.5% Bi2O3 when sintered at 1400�C. The average grain size was also increased with the dopants system and significantly lowered the breakdown voltage (910 mV/mm), making it suitable for low voltage application. Furthermore, the current-voltage characteristic of the TiO2 revealed a significantly high value of nonlinearity of 16.5 and low clamping ratio. Moreover, higher permittivity of 4.89�104 and low dissipation factor at 100 Hz were achieved with the new composition. Hence, it was possible to produce a new TiO2 based varistor material with enhanced properties and reliability. The fabrication was simulated using Silvaco software which showed higher value of 21.4 for the nonlinear coefficient with the same composition. The composition of 0.5 wt% Ta2O5+0.5 wt% SiO2+0.25 wt% WO3+0.5 wt% Bi2O3 when sintered at 1400 �C with two hours of holding time provided significantly improved characteristics. � 2023 Elsevier Inc. All rights reserveden_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/B978-0-12-819728-8.00001-2
dc.identifier.epage441
dc.identifier.scopus2-s2.0-85171505093
dc.identifier.spageV3
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85171505093&doi=10.1016%2fB978-0-12-819728-8.00001-2&partnerID=40&md5=5f7ee344e2ea141752b7d9bd28c4816e
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/34501
dc.identifier.volume1-Mar
dc.pagecount438
dc.publisherElsevieren_US
dc.sourceScopus
dc.sourcetitleEncyclopedia of Materials: Electronics
dc.subjectDielectric strength
dc.subjectDopants
dc.subjectFired density
dc.subjectGreen density
dc.subjectNonlinear coefficient
dc.subjectPerformance characteristics
dc.subjectTiO<sub>2</sub> varistor
dc.titleSearch of Potential Dopants and its Effect on TiO2-Based Low Voltage Varistor Materialsen_US
dc.typeBook chapteren_US
dspace.entity.typePublication
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