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Elucidating the effects of Cr?S variations in Cr-doped CZTS for intermediate band solar cell applications

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dc.citedby1
dc.contributor.authorSapeli M.M.I.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorYusoff Y.en_US
dc.contributor.authorRahman K.S.en_US
dc.contributor.authorRafiq M.K.S.en_US
dc.contributor.authorShahahmadi S.A.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid57201282111en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid57206844407en_US
dc.contributor.authorid56348138800en_US
dc.contributor.authorid58826767900en_US
dc.contributor.authorid55567116600en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2025-03-03T07:42:16Z
dc.date.available2025-03-03T07:42:16Z
dc.date.issued2024
dc.description.abstractIntermediate band (IB) materials, such as chromium-doped Cu2ZnSnS4 (CZTS:Cr) show promise for surpassing the Shockley-Queisser limit in solar cells. This study explores the effects of sulphur variation in this film. Sulphurization results in a layered structure, with Cr-poor micron-sized grains on top and Cr-rich nanograins at the bottom preventing complete crystallization. Optimization improves the Cu2ZnSnS4 (CZTS) crystallization and introduces additional absorption peaks at 1.15 eV and 1.31 eV, alongside the fundamental 1.55 eV absorption using 47.1 mg of sulphur content. CZTS:Cr device fabricated achieve a threefold increase in current density (Jsc) compared to undoped samples. These findings are crucial for advancing intermediate band solar cell (IBSC) based on CZTS:Cr IB material. ? 2024 Elsevier B.V.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo115790
dc.identifier.doi10.1016/j.optmat.2024.115790
dc.identifier.scopus2-s2.0-85198028040
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85198028040&doi=10.1016%2fj.optmat.2024.115790&partnerID=40&md5=b986dc361606f0a6e18da36220f0f3b0
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/36404
dc.identifier.volume154
dc.publisherElsevier B.V.en_US
dc.sourceScopus
dc.sourcetitleOptical Materials
dc.subjectChromium compounds
dc.subjectSolar cells
dc.subjectSulfur
dc.subjectTin compounds
dc.subjectZinc compounds
dc.subjectCr-doped
dc.subjectCr-doped CZTS
dc.subjectIntermediate band materials
dc.subjectIntermediate-band solar cells
dc.subjectLayered Structures
dc.subjectNano grains
dc.subjectShockley-queisser limits
dc.subjectSolar-cell applications
dc.subjectSputtering
dc.subjectSulphurization
dc.subjectCopper compounds
dc.titleElucidating the effects of Cr?S variations in Cr-doped CZTS for intermediate band solar cell applicationsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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