Publication:
Ultraviolet Laser Diode Ablation Process for CMOS 45 nm Copper Low-K Semiconductor Wafer

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dc.citedby3
dc.contributor.authorShi K.W.en_US
dc.contributor.authorKar Y.B.en_US
dc.contributor.authorTalik N.A.en_US
dc.contributor.authorYew L.W.en_US
dc.contributor.authorid35796107300en_US
dc.contributor.authorid26649255900en_US
dc.contributor.authorid55576358000en_US
dc.contributor.authorid56104265900en_US
dc.date.accessioned2023-05-29T06:40:33Z
dc.date.available2023-05-29T06:40:33Z
dc.date.issued2017
dc.descriptionAblation; CMOS integrated circuits; Composite micromechanics; Copper; Design of experiments; Laser ablation; Laser pulses; Micromachining; Pulse repetition rate; Semiconductor diodes; Semiconductor lasers; Silicon wafers; Solid state lasers; Advanced dicing tehcnology; Laser dicing; Laser grooving; Laser micro-machining; Laser scribing; semicoonductor wafer; Ultra low-k; Ultraviolet lasersen_US
dc.description.abstractThis paper presents the optimization work of 355 nm ultraviolet (UV) laser diode ablation process for CMOS 45 nm Copper (Cu) low-k semiconductor wafer. The micromachining parameters included laser power, laser frequency, feed speed, and defocus amount were optimized via design of experiment (DOE). Package reliability stressing tests were carried out as part of the efforts to validate the robustness. The results show that high repetition rate, low laser pulse energy and a high pulse overlap produced zero dicing defects. The laser groove depth increased as the laser pulse energy increased. It is shown that, laser grooving is one of the best solutions to choose for dicing quality, throughput and yield improvements for CMOS 45 nm Cu low-k wafer dicing. � 2017 The Authors. Published by Elsevier Ltd.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.proeng.2017.04.106
dc.identifier.epage369
dc.identifier.scopus2-s2.0-85019716403
dc.identifier.spage360
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85019716403&doi=10.1016%2fj.proeng.2017.04.106&partnerID=40&md5=be4cf7e4b766be6d405f9d7e36c10d31
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23445
dc.identifier.volume184
dc.publisherElsevier Ltden_US
dc.relation.ispartofAll Open Access, Gold
dc.sourceScopus
dc.sourcetitleProcedia Engineering
dc.titleUltraviolet Laser Diode Ablation Process for CMOS 45 nm Copper Low-K Semiconductor Waferen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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