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A numerical study on delafossite CuFeO2 as an absorber for efficient and sustainable oxide solar cells

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dc.citedby1
dc.contributor.authorSarkar D.K.en_US
dc.contributor.authorMottakin M.en_US
dc.contributor.authorHasan A.K.M.en_US
dc.contributor.authorSelvanathan V.en_US
dc.contributor.authorAriful Islam M.en_US
dc.contributor.authorShahiduzzaman M.en_US
dc.contributor.authorAlharbi H.F.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorid57220704093en_US
dc.contributor.authorid57195305487en_US
dc.contributor.authorid57200133780en_US
dc.contributor.authorid57160057200en_US
dc.contributor.authorid57361246600en_US
dc.contributor.authorid55640096500en_US
dc.contributor.authorid57188221000en_US
dc.contributor.authorid57195441001en_US
dc.date.accessioned2024-10-14T03:17:31Z
dc.date.available2024-10-14T03:17:31Z
dc.date.issued2023
dc.description.abstractThis study proposes an oxide solar cell in an n-p-p structure. This design uses a p-type delafossite CuFeO2 layer to absorb Sunlight, along with n-ZnO to transport electrons and p-NiO to transport holes. The SCAPS-1D modeling software was employed to conduct the relative study on the p-CuFeO2 absorber layer. The optimized thickness, bandgap, and bulk defects tolerance limit of the absorber layer are 700 nm, 1.3 eV, and 1014 cm?3, respectively. The charge carrier�s density in the absorber layer at 1018 cm?3 showed the highest performance. The defects tolerance limit of the interface n-ZnO/CuFeO2 is 1017 cm?3. After optimizing the device FTO/n-ZnO/CuFeO2/p-NiO/Au exhibited a maximum power conversion efficiency of 19.93%, corresponding V oc of 1.10 V, J sc of 24.95 mA cm?2, and FF of 85.5%. Additionally, this study demonstrates the prospect of CuFeO2 as the active layer in oxide-based solar cell technology. � 2023 The Japan Society of Applied Physics.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo102004
dc.identifier.doi10.35848/1347-4065/acfa4b
dc.identifier.issue10
dc.identifier.scopus2-s2.0-85176274630
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85176274630&doi=10.35848%2f1347-4065%2facfa4b&partnerID=40&md5=82024b1a01ee382b52595680c2d41ed6
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/33962
dc.identifier.volume62
dc.publisherInstitute of Physicsen_US
dc.sourceScopus
dc.sourcetitleJapanese Journal of Applied Physics
dc.subjectCuFeO<sub>2</sub>
dc.subjectdelafossite oxide
dc.subjectoxide solar cell
dc.subjectSCAPS-1D
dc.subjectConversion efficiency
dc.subjectDefects
dc.subjectII-VI semiconductors
dc.subjectIron compounds
dc.subjectNickel oxide
dc.subjectSolar cells
dc.subjectZinc oxide
dc.subjectAbsorber layers
dc.subjectDefect tolerance
dc.subjectDelafossite oxides
dc.subjectDelafossites
dc.subjectDesign use
dc.subjectOxide solar cell
dc.subjectP-structures
dc.subjectP-type
dc.subjectSCAPS-1D
dc.subjectTolerance limits
dc.subjectCopper compounds
dc.titleA numerical study on delafossite CuFeO2 as an absorber for efficient and sustainable oxide solar cellsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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