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Simulation and optimization of Lattice Mismatched InGaAs Thermophotovoltaic Cell

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dc.contributor.authorSebastian S.J.en_US
dc.contributor.authorRashid W.E.S.W.A.en_US
dc.contributor.authorLee H.J.en_US
dc.contributor.authorJamaludin M.Z.en_US
dc.contributor.authorKer P.J.en_US
dc.contributor.authorGamel M.M.A.en_US
dc.contributor.authorid57220875364en_US
dc.contributor.authorid57204586520en_US
dc.contributor.authorid57190622221en_US
dc.contributor.authorid57216839721en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid57215306835en_US
dc.date.accessioned2023-05-29T08:07:28Z
dc.date.available2023-05-29T08:07:28Z
dc.date.issued2020
dc.description.abstractThermophotovoltaic (TPV) system harvests heat from thermal radiation where the photons are absorbed by a photovoltaic (PV) cell device and generates electrical energy. InGaAs is one of the popular III-V semiconductors material and has a great potential to be an efficient TPV cell if further optimization and improvements are made. In this paper, In0.68 Ga0.32 As with bandgap energy of 0.6 eV and cut-off wavelength at 2.1 ?m is modeled and optimized using TCAD simulation software. InAsP buffer layers were incorporated to reduce 1.1% lattice-matched effect between the device layer and lnP substrate. The cell's base and emitter layers were optimized by varying the thickness and the doping concentration of the cell layer individually under 1400 K blackbody spectrum. The optimization of emitter thickness and base doping concentration significantly contribute to a higher cell performance. An emitter thickness of 0.06 ?m contributes to an efficiency (?) of 25.55% while a base doping concentration of 1 � 1016 cm-3 recorded 23.08% of ?. � 2020 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo9250963
dc.identifier.doi10.1109/SCOReD50371.2020.9250963
dc.identifier.epage248
dc.identifier.scopus2-s2.0-85097785268
dc.identifier.spage243
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85097785268&doi=10.1109%2fSCOReD50371.2020.9250963&partnerID=40&md5=673b856d61fd2d990a2897102079d4cb
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25231
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitle2020 IEEE Student Conference on Research and Development, SCOReD 2020
dc.titleSimulation and optimization of Lattice Mismatched InGaAs Thermophotovoltaic Cellen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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