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Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET device

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dc.citedby5
dc.contributor.authorKaharudin K.E.en_US
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorHamidon A.H.en_US
dc.contributor.authorZain A.en_US
dc.contributor.authorAbd Aziz M.N.I.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorid56472706900en_US
dc.contributor.authorid36239165300en_US
dc.contributor.authorid26656722400en_US
dc.contributor.authorid55925762500en_US
dc.contributor.authorid57188564202en_US
dc.contributor.authorid12792216600en_US
dc.date.accessioned2023-05-29T06:12:32Z
dc.date.available2023-05-29T06:12:32Z
dc.date.issued2016
dc.description.abstractAs the MOSFET's size is expected to be shrunk every year, it is difficult to mitigate the short channel effect (SCE) issues arising in the device. The conventional MOSFET's structure is no longer practical to apprehend these types of issues, especially for a device with a very small gate length (Lg). The SCE issues happen due to the reduction of the gate length (Lg), which causes the distance between the source and the drain region to become too close to each other. As a consequence, it causes the charge sharing effects between source and drain region that eventually leads to higher subthreshold swing (SS). A steep SS value around 55 to 65 mV/dec is desired in MOSFET device for faster switching operation. Therefore, a new architecture of Vertical Double Gate (DG) MOSFET device is proposed to circumvent these issues. Besides that, the process parameter variations in the device are also considered as one of the important factors that significantly affect the SS value. In this paper, an attempt to analyze the variability of multiple process parameters towards the SS value in 12nm gate length (Lg) vertical DG-MOSFET device has been made. At the end of the experiments, it was found that the most dominant process parameter that contributed a large effect on SS value was halo implantation tilt angle. The lowest possible value of SS was observed to be 62.52 mV/dec with signal-to-noise ratio (SNR) of -35.83 dB. � 2006-2016 Asian Research Publishing Network (ARPN).en_US
dc.description.natureFinalen_US
dc.identifier.epage3142
dc.identifier.issue5
dc.identifier.scopus2-s2.0-84961615160
dc.identifier.spage3137
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84961615160&partnerID=40&md5=d11f382cbae4c416d7fa6adc493c8ec0
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22829
dc.identifier.volume11
dc.publisherAsian Research Publishing Networken_US
dc.sourceScopus
dc.sourcetitleARPN Journal of Engineering and Applied Sciences
dc.titleVariability analysis of process parameters on subthreshold swing in vertical DG-MOSFET deviceen_US
dc.typeArticleen_US
dspace.entity.typePublication
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