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Improvement of Cu-Al bond integrity on low k pad structures

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dc.citedby0
dc.contributor.authorKid W.B.en_US
dc.contributor.authorLeng E.P.en_US
dc.contributor.authorYong C.C.en_US
dc.contributor.authorYi O.X.en_US
dc.contributor.authorKar Y.B.en_US
dc.contributor.authorid36992192300en_US
dc.contributor.authorid26423002500en_US
dc.contributor.authorid24726352800en_US
dc.contributor.authorid54785740300en_US
dc.contributor.authorid26649255900en_US
dc.date.accessioned2023-12-29T07:47:01Z
dc.date.available2023-12-29T07:47:01Z
dc.date.issued2011
dc.description.abstractGold wires are commonly used for wire-bonding and it fits well the industrial requirements. However, the price of Gold wires increasing significantly, Copper wires is a potential replacement for Gold due to their superior electrical and mechanical properties. In order to incorporate Cu in the wire-bonding process, substantial data regarding aging and intermetallic formation of Cu-Al bonds is required and the results are compared with Au samples. In this study, the bond integrity and thermal aging of Cu-Al and Au-Al wire-bonds were investigated. The Copper and Gold wire-bonds samples were heat-treated at temperature of 225�C for 4.5, 13.5, 26, 52 and 97 hours respectively. The intermetallics of the wire-bonds, and in particular the Al-Cu interface, were studied. Discontinuous and non-uniform of Cu-Al intermetallics regions were found in the thermal aging samples. The thickness of Cu-Al intermetallics is growing linearly with the temperature as the diffusion rate increases in higher temperature. The Cu-Al bond is weak compare to Au-Al in accordance with aging through wire pull test. � 2011 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo6088325
dc.identifier.doi10.1109/RSM.2011.6088325
dc.identifier.epage210
dc.identifier.scopus2-s2.0-83755194849
dc.identifier.spage207
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-83755194849&doi=10.1109%2fRSM.2011.6088325&partnerID=40&md5=43bb7e1d67201cd4e08d06baa0b2a7b7
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/30356
dc.pagecount3
dc.sourceScopus
dc.sourcetitle2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts
dc.subjectCopper
dc.subjectElectric properties
dc.subjectGold
dc.subjectIntermetallics
dc.subjectMechanical properties
dc.subjectThermal aging
dc.subjectWire
dc.subjectBond integrities
dc.subjectCopper wires
dc.subjectDiffusion rate
dc.subjectElectrical and mechanical properties
dc.subjectGold wire
dc.subjectHigher temperatures
dc.subjectIndustrial requirements
dc.subjectIntermetallic formation
dc.subjectPad structures
dc.subjectWire bonds
dc.subjectWirebonding
dc.subjectAluminum
dc.titleImprovement of Cu-Al bond integrity on low k pad structuresen_US
dc.typeConference paperen_US
dspace.entity.typePublication
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