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Performance analysis of indium antimonide thermophotovoltaic system with varied material and geometrical properties

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dc.contributor.authorMohd Jasni M.S.en_US
dc.contributor.authorChoong J.S.en_US
dc.contributor.authorWan Abd Rashid W.E.S.en_US
dc.contributor.authorAbdul Wahab Y.en_US
dc.contributor.authorWan Muhamad Hatta S.F.en_US
dc.contributor.authorid57368165200en_US
dc.contributor.authorid57367336000en_US
dc.contributor.authorid57368581400en_US
dc.contributor.authorid57203353903en_US
dc.contributor.authorid35184383500en_US
dc.date.accessioned2023-05-29T09:05:31Z
dc.date.available2023-05-29T09:05:31Z
dc.date.issued2021
dc.descriptionCells; Cytology; Electronic design automation; Erbium compounds; Gallium arsenide; Geometry; III-V semiconductors; Indium alloys; Indium antimonides; Photoelectrochemical cells; Photovoltaic cells; Semiconducting gallium; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconductor alloys; Different geometry; Generate electricity; Geometrical property; Indium antimonide; Performance; Performances analysis; Surface irradiation; TCAD modeling; Thermophotovoltaic systems; Thermophotovoltaics; Efficiencyen_US
dc.description.abstractThermophotovoltaic (TPV) system generates electricity using the selective emission of radiation on a photovoltaic (PV) cell by heating an emitter to a very high temperature. In this work, Indium Antimonide (InSb) is used as it has a low bandgap of 0.23 eV and the performance of the InSb TPV system is compared to an Indium Gallium Arsenide (InGaAs) TPV system. TPV system of different geometries like cylindrical, flat planar, and polygonal shapes are simulated to understand the influence of TPV structure in the efficiency and reliable operating conditions of the TPV system. To enhance the efficiency of the TPV cell, a photonic crystal (PhC) filter is also inserted between the cell and the emitters that consists of a blackbody, Erbium Oxide (Er2O3), and Tungsten to allow only selective radiation from the emitter to the PV cell. The proposed TPV system has a simple structure, it is thermally stable, easy-to-manufacture, and it contains no moving parts. In summary, the performance of an InSb TPV system of different geometries is analysed by matching it with a filter and emitters made of different materials. The performance of the InSb TPV system is then benchmarked against an InGaAs TPV system. � 2021 Elsevier Ltden_US
dc.description.natureFinalen_US
dc.identifier.ArtNo114325
dc.identifier.doi10.1016/j.microrel.2021.114325
dc.identifier.scopus2-s2.0-85120887554
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85120887554&doi=10.1016%2fj.microrel.2021.114325&partnerID=40&md5=0c0a237b0ecb4ba88720437adbb849c7
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25913
dc.identifier.volume126
dc.publisherElsevier Ltden_US
dc.sourceScopus
dc.sourcetitleMicroelectronics Reliability
dc.titlePerformance analysis of indium antimonide thermophotovoltaic system with varied material and geometrical propertiesen_US
dc.typeArticleen_US
dspace.entity.typePublication
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