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Formation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cell

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dc.citedby6
dc.contributor.authorOng K.H.en_US
dc.contributor.authorRamasamy A.en_US
dc.contributor.authorArnou P.en_US
dc.contributor.authorManiscalco B.en_US
dc.contributor.authorW. Bowers J.en_US
dc.contributor.authorChandan Kumar C.en_US
dc.contributor.authorBte Marsadek M.en_US
dc.contributor.authorid57203145595en_US
dc.contributor.authorid16023154400en_US
dc.contributor.authorid56429479000en_US
dc.contributor.authorid54793233900en_US
dc.contributor.authorid7402759893en_US
dc.contributor.authorid6701755282en_US
dc.contributor.authorid26423183000en_US
dc.date.accessioned2023-05-29T06:51:04Z
dc.date.available2023-05-29T06:51:04Z
dc.date.issued2018
dc.descriptionCopper compounds; Efficiency; Gallium compounds; Layered semiconductors; Molybdenum oxide; Plasma jets; Solar cells; Thin film solar cells; Thin films; Atmospheric plasmas; Barrier layers; CIGS thin films; Gallium selenides; MoSe2; Selenium compoundsen_US
dc.description.abstractAs part of the device fabrication process, selenization step is required to crystallise the CIGS absorber layer. However, during high temperature selenization process, excessive formation of MoSe2 can lead to delamination of the film and adverse effect on electrical properties of the solar cells. In this paper, a new method is proposed to form a Molybdenum Oxide (MoOx) barrier layer in between of the Mo back contact using plasma jet under atmospheric based conditions. The effect of MoOx compound (MoO2 and MoO3) towards the efficiency of the device is investigated. It has been proven that a thin layer of MoOx barrier layer is able to control the formation of MoSe2 effectively and provide a significant improvement in electrical properties of the devices. A power conversion efficiency of 5.24% with least efficiency variation across the champion device was achieved which demonstrates the importance of this methodology on small area devices. � 2018, � 2018 Informa UK Limited, trading as Taylor & Francis Group.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1080/10667857.2018.1502512
dc.identifier.epage729
dc.identifier.issue11
dc.identifier.scopus2-s2.0-85050654828
dc.identifier.spage723
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85050654828&doi=10.1080%2f10667857.2018.1502512&partnerID=40&md5=e3e4e8ab98ab9a82817ee7a1c7380b18
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23696
dc.identifier.volume33
dc.publisherTaylor and Francis Ltd.en_US
dc.relation.ispartofAll Open Access, Green
dc.sourceScopus
dc.sourcetitleMaterials Technology
dc.titleFormation of MoOx barrier layer under atmospheric based condition to control MoSe2 formation in CIGS thin film solar cellen_US
dc.typeArticleen_US
dspace.entity.typePublication
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