Publication:
Microstructural evolution of oxygen incorporated CdTe thin films deposited by close-spaced sublimation

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dc.citedby7
dc.contributor.authorHarif M.N.en_US
dc.contributor.authorRahman K.S.en_US
dc.contributor.authorDoroody C.en_US
dc.contributor.authorRosly H.N.en_US
dc.contributor.authorIsah M.en_US
dc.contributor.authorAlghoul M.A.en_US
dc.contributor.authorMisran H.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid22634024000en_US
dc.contributor.authorid56348138800en_US
dc.contributor.authorid56905467200en_US
dc.contributor.authorid36873451800en_US
dc.contributor.authorid57219626175en_US
dc.contributor.authorid8626748100en_US
dc.contributor.authorid6506899840en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T09:42:32Z
dc.date.available2023-05-29T09:42:32Z
dc.date.issued2022
dc.descriptionAnnealing; Argon; Cadmium telluride; Carrier concentration; Energy gap; Grain size and shape; II-VI semiconductors; Morphology; Optical properties; Oxygen; Scanning electron microscopy; Sublimation; Surface morphology; Thin films; X ray diffraction; Argon ambient; Argon/O2 ambient; Cadmium telluride thin films; Close spaced sublimation; Grainsize; In-vacuum; Micro-structural; Optical-; Property; Scanning electrons; Microstructureen_US
dc.description.abstractIn this work, cadmium telluride (CdTe) thin film was deposited in vacuum (pure argon ambient) as well as different argon (Ar) and oxygen (O2) ambient conditions using close-spaced sublimation (CSS) method at the deposition pressure of 1 Torr. The deposited films were characterized via X-ray Diffraction (XRD), Scanning Electron Microscope (SEM), UV�Vis spectrophotometer and Hall Effect measurement for the analysis of structural properties, morphology, optical properties and electrical properties, respectively. XRD patterns exhibited almost similar preferential orientation plane at (1 1 1) irrespective of the O2 concentration. SEM surface morphology microstructure revealed that O2 presence had a substantial effect on grain size reaching up to 7.19 �m. Optical properties also demonstrated insignificant changes in the direct band gap values of around 1.48 eV. Carrier concentration showed an upward trend in the order of 1013 cm?3, whereby resistivity and mobility did not change substantially either in vacuum (pure Ar ambient) or in Ar/O2 ambient. � 2021 Elsevier B.V.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo130552
dc.identifier.doi10.1016/j.matlet.2021.130552
dc.identifier.scopus2-s2.0-85112171257
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85112171257&doi=10.1016%2fj.matlet.2021.130552&partnerID=40&md5=e40b3ab884602aa5f91c31027cdde098
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/27311
dc.identifier.volume306
dc.publisherElsevier B.V.en_US
dc.sourceScopus
dc.sourcetitleMaterials Letters
dc.titleMicrostructural evolution of oxygen incorporated CdTe thin films deposited by close-spaced sublimationen_US
dc.typeArticleen_US
dspace.entity.typePublication
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