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Diluted chemical bath deposition of CdZnS as prospective buffer layer in CIGS solar cell

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dc.citedby17
dc.contributor.authorMunna F.T.en_US
dc.contributor.authorSelvanathan V.en_US
dc.contributor.authorSobayel K.en_US
dc.contributor.authorMuhammad G.en_US
dc.contributor.authorAsim N.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorid57200988091en_US
dc.contributor.authorid57160057200en_US
dc.contributor.authorid57194049079en_US
dc.contributor.authorid56605566900en_US
dc.contributor.authorid55902096700en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid57195441001en_US
dc.date.accessioned2023-05-29T09:08:18Z
dc.date.available2023-05-29T09:08:18Z
dc.date.issued2021
dc.descriptionBuffer layers; Cadmium sulfide; Deposition; II-VI semiconductors; Lime; Solar cells; Substrates; Thin films; Zinc sulfide; Chemical bath deposition technique; Chemical-bath deposition; Homogeneous distribution; Optical characterization; Optoelectronic properties; Precursor concentration; Soda lime glass substrate; X-ray diffractograms; Zinc compoundsen_US
dc.description.abstractIn this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn2+ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn2+ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn2+. Optical characterization has shown that the transparency of the film is influenced by Zn2+ concentration and when the Zn2+ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn2+ concentration would be a promising candidate in CIGS solar cell. � 2020 Elsevier Ltd and Techna Group S.r.l.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.ceramint.2020.12.222
dc.identifier.epage11009
dc.identifier.issue8
dc.identifier.scopus2-s2.0-85100153846
dc.identifier.spage11003
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85100153846&doi=10.1016%2fj.ceramint.2020.12.222&partnerID=40&md5=213fad0e82635c10a810a61e32bb94fb
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26253
dc.identifier.volume47
dc.publisherElsevier Ltden_US
dc.sourceScopus
dc.sourcetitleCeramics International
dc.titleDiluted chemical bath deposition of CdZnS as prospective buffer layer in CIGS solar cellen_US
dc.typeArticleen_US
dspace.entity.typePublication
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