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Influence of oxygen on structural and optoelectronic properties of CdS thin film deposited by magnetron sputtering technique

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dc.citedby18
dc.contributor.authorIslam M.A.en_US
dc.contributor.authorHatta S.F.W.M.en_US
dc.contributor.authorMisran H.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid57220973693en_US
dc.contributor.authorid22634464300en_US
dc.contributor.authorid6506899840en_US
dc.contributor.authorid57195441001en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T08:07:23Z
dc.date.available2023-05-29T08:07:23Z
dc.date.issued2020
dc.description.abstractIn this study, CdS thin films with thicknesses of approximately 100 nm were deposited at a substrate temperature of 100 �C by a sputtering technique under two different ambient conditions�pure Ar ambient and Ar/O2 (99:1) ambient�at deposition power densities of 1.0 and 2.0 W/cm2, respectively The films were polycrystalline with a preferential orientation along the (002) crystal plane; however, the films deposited in the Ar/O2 ambient exhibited reduced crystallinity. Furthermore, the crystallite sizes, micro-strains, and dislocation densities of the films were significantly affected by oxygen diffusion into the films� crystal structures. The CdS films deposited in the Ar/O2 ambient demonstrated higher optical transmittance and higher bandgaps. Morphologies observed from scanning electron microscopy images revealed that the grains of the films were also significantly affected by the oxygen present in the deposition ambient. Additionally, photoluminescence analysis revealed that the sulfur vacancies in the CdS films were partially filled by oxygen atoms, causing significant variations in the electrical properties of the films. � 2020 The Physical Society of the Republic of China (Taiwan)en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.cjph.2020.06.010
dc.identifier.epage179
dc.identifier.scopus2-s2.0-85088659372
dc.identifier.spage170
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85088659372&doi=10.1016%2fj.cjph.2020.06.010&partnerID=40&md5=e1cbc66250c4a2d091322a009ec5846b
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25212
dc.identifier.volume67
dc.publisherPhysical Society of the Republic of Chinaen_US
dc.sourceScopus
dc.sourcetitleChinese Journal of Physics
dc.titleInfluence of oxygen on structural and optoelectronic properties of CdS thin film deposited by magnetron sputtering techniqueen_US
dc.typeArticleen_US
dspace.entity.typePublication
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