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A low cost and single source atmospheric pressure vapor phase epitaxy of ZnS for thin film photovoltaic applications

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dc.citedby9
dc.contributor.authorYusoff Y.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorKamaruddin N.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid57206844407en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid57199323107en_US
dc.contributor.authorid57195441001en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T06:51:54Z
dc.date.available2023-05-29T06:51:54Z
dc.date.issued2018
dc.descriptionAtmospheric pressure; Buffer layers; Cadmium telluride; Chemical vapor deposition; Copper compounds; Gallium compounds; II-VI semiconductors; Lime; Optical emission spectroscopy; Scanning electron microscopy; Selenium compounds; Solar cells; Solar power generation; Substrates; Thin film solar cells; Tin compounds; Vapor phase epitaxy; X ray diffraction analysis; Zinc; Zinc sulfide; Chemical vapor depositions (CVD); Dry deposition process; Field emission scanning electron microscopes; Hall effect measurement; Photovoltaic; Photovoltaic applications; Soda lime glass substrate; Vapor phase reactions; Thin filmsen_US
dc.description.abstractA novel and low cost vapor phase epitaxy (VPE) method using a single non-volatile source has been used to deposit ZnS thin films on soda lime glass substrates. Utilization of the non-volatile source eliminates the need for expensive and sophisticated reactors commonly used in conventional VPE. Instead, this experiment was carried out using inexpensive and easily attainable apparatus. The vapor phase reaction process described is also more compatible to the industry standard dry deposition processes of the other layers in the thin film solar cell stack for Cu(In,Ga)Se2 (CIGS), Cu2ZnSnS4 (CZTS) and CdTe photovoltaic (PV) devices. In this experiment, the substrate temperature was varied from 400 to 480 �C and the ZnS thin films produced were analyzed using X-ray diffractometry (XRD), optical spectroscopy, field emission scanning electron microscope (FESEM) and Hall effect measurement system. The films were found to be hexagonal structured except for the film deposited at 480 �C, where the film was found to be cubic. The thickness, bandgap and resistivity of the deposited films ranged from 54 to 351 nm, 3.18 to 3.83 eV and 2 � 103 to 1.6 � 104 ?�cm respectively. � 2018 Elsevier B.V.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.matlet.2018.03.096
dc.identifier.epage219
dc.identifier.scopus2-s2.0-85044785722
dc.identifier.spage216
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85044785722&doi=10.1016%2fj.matlet.2018.03.096&partnerID=40&md5=efdbc410a8ac99264ff3c6efbfee972f
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23796
dc.identifier.volume221
dc.publisherElsevier B.V.en_US
dc.sourceScopus
dc.sourcetitleMaterials Letters
dc.titleA low cost and single source atmospheric pressure vapor phase epitaxy of ZnS for thin film photovoltaic applicationsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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