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Impact Analysis of Potential Induced Degradation on Crystalline Silicon Solar Cell Performance by Correlating Practical Diagnosis with MATLAB Simulation

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dc.contributor.authorHasan A.A.Q.en_US
dc.contributor.authorAlkahtani A.A.en_US
dc.contributor.authorIslam M.A.en_US
dc.contributor.authorAlsariera Y.A.en_US
dc.contributor.authorSathiswary S.en_US
dc.contributor.authorKassim N.M.en_US
dc.contributor.authorHossain M.I.en_US
dc.contributor.authorIshikawa Y.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid57220644795en_US
dc.contributor.authorid55646765500en_US
dc.contributor.authorid57220973693en_US
dc.contributor.authorid57216243342en_US
dc.contributor.authorid57982825200en_US
dc.contributor.authorid57982825300en_US
dc.contributor.authorid57212814509en_US
dc.contributor.authorid57650074000en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T09:36:11Z
dc.date.available2023-05-29T09:36:11Z
dc.date.issued2022
dc.descriptionElectric resistance; Failure analysis; Fault detection; MATLAB; Silicon; Silicon solar cells; Crystalline silicon solar cells; EL; Energy; Fill-factor; Impact analysis; Induced degradation; MATLAB/ SIMULINK; Parasitic resistances; Potential induced degradation; Solar cell performance; Solar panelsen_US
dc.description.abstractExtensive research on fault diagnosis is essential to detect various faults that occur to different photovoltaic (PV) panels to keep PV systems operating at peak performance. Here, we present an impact analysis of potential induced degradation (PID) on the current�voltage (I-V) characteristics of crystalline silicon (c-Si) solar cells. The impact of parasitic resistances on solar cell performance is highlighted and linked to fault and degradation. Furthermore, a Simulink model for a single solar cell is proposed and used to estimate the I-V characteristics of a PID-affected PV cell based on experimental results attributes. The measured data show that the fill factor (FF) drops by approximately 13.7% from its initial value due to a decrease in shunt resistance (Rsh). Similarly, the simulation results find that the fill factor degraded by approximately 12% from its initial value. The slight increase in measured data could be due to series resistance effects which were assumed to be zero in the simulated data. This study links simulation and experimental work to confirm the I-V curve behavior of PID-affected PV cells, which could help to improve fault diagnosis methods. � 2022 by the authors.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo8056
dc.identifier.doi10.3390/ma15228056
dc.identifier.issue22
dc.identifier.scopus2-s2.0-85142695083
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85142695083&doi=10.3390%2fma15228056&partnerID=40&md5=924aaf75da644f57434a4da40ee9390d
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26686
dc.identifier.volume15
dc.publisherMDPIen_US
dc.relation.ispartofAll Open Access, Gold, Green
dc.sourceScopus
dc.sourcetitleMaterials
dc.titleImpact Analysis of Potential Induced Degradation on Crystalline Silicon Solar Cell Performance by Correlating Practical Diagnosis with MATLAB Simulationen_US
dc.typeArticleen_US
dspace.entity.typePublication
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