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Zinc sulfide thin films deposited by chemical bath: Tuning consideration of structural, optical band gap, and electrical properties for CIGS solar cells application

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dc.citedby2
dc.contributor.authorArsad A.Z.en_US
dc.contributor.authorBahrudin M.S.en_US
dc.contributor.authorArzaee N.A.en_US
dc.contributor.authorRahman M.N.A.en_US
dc.contributor.authorChau C.F.en_US
dc.contributor.authorAbdullah S.F.en_US
dc.contributor.authorZuhdi A.W.M.en_US
dc.contributor.authorid56926685200en_US
dc.contributor.authorid55603412800en_US
dc.contributor.authorid57204034965en_US
dc.contributor.authorid57102327000en_US
dc.contributor.authorid25824209000en_US
dc.contributor.authorid14319069500en_US
dc.contributor.authorid56589966300en_US
dc.date.accessioned2025-03-03T07:44:16Z
dc.date.available2025-03-03T07:44:16Z
dc.date.issued2024
dc.description.abstractZinc sulfide (ZnS) is widely employed in a solar cell structure as a buffer layer due to its excellent physical and chemical properties. ZnS elements discovered in the earth's crust are safe. This study examined the performance characteristics of ZnS thin films deposited on soda lime glass substrate via chemical bath deposition. The ZnS thin films were annealed at temperatures of 300, 400, and 500 �C in a vacuum environment. XRD showed the ZnS thin films with high annealing temperatures are composed of a wurtzite structure. Increased annealing temperature improved crystallization, average crystallite sizes, film thickness, and low dislocation density as well as lattice strain. The FESEM analysis reveals that the morphology of annealed thin film at high temperatures has larger grains compared to the deposited films. EDS spectra confirm that zinc and sulfur are present in the ZnS thin film. Annealed films have an average transmission of 20?50 % in the visible spectrum of 300?1100 nm. Films exhibit 103 �cm resistivity, and the bulk carrier density ranges between 1012 and 1014 cm?3. The annealed film at 500 �C has a direct band gap of 3.47 eV, a resistivity of 1.79 ? 103 �cm, and a bulk concentration of 1.19 ? 1014 cm?3. All ZnS thin films have n-type conductivity. ? 2024 Elsevier Ltd and Techna Group S.r.l.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.ceramint.2024.01.082
dc.identifier.epage11786
dc.identifier.issue7
dc.identifier.scopus2-s2.0-85181966390
dc.identifier.spage11776
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85181966390&doi=10.1016%2fj.ceramint.2024.01.082&partnerID=40&md5=a0dfa40871caad6e4f87d73ca102eb68
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/36733
dc.identifier.volume50
dc.pagecount10
dc.publisherElsevier Ltden_US
dc.sourceScopus
dc.sourcetitleCeramics International
dc.subjectAnnealing
dc.subjectBuffer layers
dc.subjectDeposition
dc.subjectEnergy gap
dc.subjectGlass substrates
dc.subjectII-VI semiconductors
dc.subjectLime
dc.subjectMorphology
dc.subjectThin film solar cells
dc.subjectThin films
dc.subjectAnnealed films
dc.subjectAnnealing temperatures
dc.subjectChemical bath
dc.subjectChemical bath deposition methods
dc.subjectCIGS solar cells
dc.subjectPhotovoltaic materials
dc.subjectPhysical and chemical properties
dc.subjectSolar cell structures
dc.subjectSolar-cell applications
dc.subjectZinc sulfide thin films
dc.subjectZinc sulfide
dc.titleZinc sulfide thin films deposited by chemical bath: Tuning consideration of structural, optical band gap, and electrical properties for CIGS solar cells applicationen_US
dc.typeArticleen_US
dspace.entity.typePublication
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