Publication:
Cubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell

Simple item page
dc.citedby8
dc.contributor.authorSameera J.N.en_US
dc.contributor.authorIslam M.A.en_US
dc.contributor.authorIslam S.en_US
dc.contributor.authorHossain T.en_US
dc.contributor.authorSobayel M.K.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorRashid M.J.en_US
dc.contributor.authorid57220953272en_US
dc.contributor.authorid57220973693en_US
dc.contributor.authorid57213340399en_US
dc.contributor.authorid36537101800en_US
dc.contributor.authorid57194049079en_US
dc.contributor.authorid57195441001en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid56754641100en_US
dc.date.accessioned2023-05-29T09:42:04Z
dc.date.available2023-05-29T09:42:04Z
dc.date.issued2022
dc.descriptionBuffer layers; Heterojunctions; II-VI semiconductors; Incident light; Semiconductor doping; Silicon carbide; Solar cells; Wide band gap semiconductors; 3c�SiC; CdTe solar cells; Cubic silicon carbide (3C-SiC); High stability; Higher efficiency; Highly stables; Light intensity; Photovoltaics; Potential buffer layer; Potential materials; Cadmium tellurideen_US
dc.description.abstractCubic Silicon Carbide (3C�SiC) is a potential material for use in photovoltaics for its significant advancement in growth in terms of crystal quality and domain size. Hence, 3C�SiC has been introduced here as an alternative non-toxic buffer layer for heterojunction CdTe solar cell. The solar cell is designed for the study consisted of multi-junction semiconductor layers such as p-CdTe/n-3C�SiC/n-SnO2. Device modeling of the novel CdTe solar cell including the thickness and doping concentration of the novel buffer layer 3C�SiC are investigated and optimized using SCAPS-1D software. Also, the defect density in the buffer layer is studied to see the tolerance of the proposed device structure. The working temperature and incident light intensity are also varied to deduce the effect of environmental conditions on efficient PV operation. � 2021 Elsevier B.V.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo111911
dc.identifier.doi10.1016/j.optmat.2021.111911
dc.identifier.scopus2-s2.0-85122077543
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85122077543&doi=10.1016%2fj.optmat.2021.111911&partnerID=40&md5=1f9aec82de6a233ccd02be5e4228cb3d
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/27280
dc.identifier.volume123
dc.publisherElsevier B.V.en_US
dc.sourceScopus
dc.sourcetitleOptical Materials
dc.titleCubic Silicon Carbide (3C�SiC) as a buffer layer for high efficiency and highly stable CdTe solar cellen_US
dc.typeArticleen_US
dspace.entity.typePublication
Files
Collections
SCOPUS