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Performance evaluation of doped titanium oxide for low-voltage applications

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dc.citedby2
dc.contributor.authorBegum S.en_US
dc.contributor.authorDaud I.R.en_US
dc.contributor.authorRamasamy A.en_US
dc.contributor.authorid7101852571en_US
dc.contributor.authorid56304354100en_US
dc.contributor.authorid16023154400en_US
dc.date.accessioned2023-05-29T05:59:42Z
dc.date.available2023-05-29T05:59:42Z
dc.date.issued2015
dc.descriptionCobalt compounds; Compressive strength; Current voltage characteristics; Doping (additives); High-k dielectric; Sintering; Tantalum oxides; Titanium dioxide; Titanium oxides; Tungsten compounds; Varistors; Average grain size; Dissipation factors; High dielectric constants; Low-voltage applications; Performance evaluations; Sintering temperatures; Theoretical density; Titanium dioxides (TiO2); Bismuth compoundsen_US
dc.description.abstractVaristors are the electronic devices which are used in various industries to protect the electrical and electronic systems from sudden surges. In this research, the electrical properties of titanium dioxide (TiO2) doped with tantalum pentoxide (Ta2O5), tungsten trioxide (WO3), cobalt oxide (Co3O4), and bismuth oxide (Bi2O3) and fired at different temperatures were investigated for low-voltage applications. The adequate amount of dopants at suitable sintering temperature had beneficial effect in improving the properties of TiO2. The relative density was found to be more than 97% of theoretical density when samples sintered between 1300�C and 1400�C for all composition compared to undoped samples. On the other hand, the addition of dopants enhanced hardness and compressive strength of varistor disks. The average grain size was also increased with the dopants system, making it suitable for low-voltage application. Furthermore, the current-voltage characteristic of the TiO2 revealed a significantly high value of nonlinearity of 19.6. A high dielectric constant of 104 with minimum dissipation factor of 0.002852 at 1 kHz was also obtained, thereby making it suitable for low-voltage application. � 2015 The American Ceramic Society.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1111/ijac.12477
dc.identifier.epage1198
dc.identifier.issue6
dc.identifier.scopus2-s2.0-84946532511
dc.identifier.spage1189
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84946532511&doi=10.1111%2fijac.12477&partnerID=40&md5=da60b1947f7f20b77b88de8abff3cc9e
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22224
dc.identifier.volume12
dc.publisherBlackwell Publishing Ltden_US
dc.sourceScopus
dc.sourcetitleInternational Journal of Applied Ceramic Technology
dc.titlePerformance evaluation of doped titanium oxide for low-voltage applicationsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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