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Characterization and Optimization of Lattice-Matched InGaAs TPV Cell for Waste Heat Harvesting

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dc.citedby1
dc.contributor.authorGamel M.M.A.en_US
dc.contributor.authorKer P.J.en_US
dc.contributor.authorLee H.J.en_US
dc.contributor.authorHannan M.A.en_US
dc.contributor.authorid57215306835en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid57190622221en_US
dc.contributor.authorid7103014445en_US
dc.date.accessioned2023-05-29T09:10:05Z
dc.date.available2023-05-29T09:10:05Z
dc.date.issued2021
dc.descriptionCells; Crystal structure; Cytology; Efficiency; Gallium alloys; III-V semiconductors; Indium alloys; Indium phosphide; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconducting indium phosphide; Semiconductor alloys; Substrates; Waste heat utilization; Cell performance; Characterization; In0.53Ga0.47As; Lattice-matched; Optimisations; Performance; Radiation temperature; TPV; Waste heat harvesting; Waste heaten_US
dc.description.abstractIn0.53Ga0.47As III-V semiconductor material has attracted significant attention from thermophotovoltaic research community due to its excellent optical and electrical properties. Furthermore, a high crystal In0.53Ga0.47 As structure can be grown on a lattice-matched InP substrate, making it a suitable candidate for large-scale production. However, the predominant drawback of the cell is low conversion efficiency, and there is a lack of detailed analysis of the effect of waste heat temperatures on the cell performance. Therefore, this work aims to conduct a comprehensive analysis via optimizing the active junction and characterizing the In0.53Ga0.47 As TPV structure under different waste heat temperatures ranging from 800 to 2000 K. TCAD Silvaco software was used to simulate the output performance of the TPV cell. The simulation results were validated with the reported experimental results. Results show that the variation of base layer thicknesses significantly affect the cell performance, with a significant increase in efficiency from 6.98 to 18.2% at a radiation temperature of 1000 K, as the base thickness increased from 1 to 13 ?m. For radiation's temperatures from 800 K to 2000 K, the efficiencies of the optimized TPV cells increased by more than 10% as compared to the reference structure. The results obtained from this study contribute to the understanding of the effects of various waste heat temperatures on the performance of In0.53Ga0.47 As TPV cell, as well as to provide useful guidelines to fabricate high-performance In0.53Ga0.47As TPV cell for various waste heat temperatures. � 2021 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1109/CENCON51869.2021.9627295
dc.identifier.epage113
dc.identifier.scopus2-s2.0-85123632184
dc.identifier.spage108
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85123632184&doi=10.1109%2fCENCON51869.2021.9627295&partnerID=40&md5=868c1f2cc8e30b4f2bc5de2404ccaf7f
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26406
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitle5th IEEE Conference on Energy Conversion, CENCON 2021
dc.titleCharacterization and Optimization of Lattice-Matched InGaAs TPV Cell for Waste Heat Harvestingen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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