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High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process

dc.citedby16
dc.contributor.authorKim H.en_US
dc.contributor.authorLiu Y.en_US
dc.contributor.authorLu K.en_US
dc.contributor.authorChang C.S.en_US
dc.contributor.authorSung D.en_US
dc.contributor.authorAkl M.en_US
dc.contributor.authorQiao K.en_US
dc.contributor.authorKim K.S.en_US
dc.contributor.authorPark B.-I.en_US
dc.contributor.authorZhu M.en_US
dc.contributor.authorSuh J.M.en_US
dc.contributor.authorKim J.en_US
dc.contributor.authorJeong J.en_US
dc.contributor.authorBaek Y.en_US
dc.contributor.authorJi Y.J.en_US
dc.contributor.authorKang S.en_US
dc.contributor.authorLee S.en_US
dc.contributor.authorHan N.M.en_US
dc.contributor.authorKim C.en_US
dc.contributor.authorChoi C.en_US
dc.contributor.authorZhang X.en_US
dc.contributor.authorChoi H.-K.en_US
dc.contributor.authorZhang Y.en_US
dc.contributor.authorWang H.en_US
dc.contributor.authorKong L.en_US
dc.contributor.authorAfeefah N.N.en_US
dc.contributor.authorAnsari M.N.M.en_US
dc.contributor.authorPark J.en_US
dc.contributor.authorLee K.en_US
dc.contributor.authorYeom G.Y.en_US
dc.contributor.authorKim S.en_US
dc.contributor.authorHwang J.en_US
dc.contributor.authorKong J.en_US
dc.contributor.authorBae S.-H.en_US
dc.contributor.authorShi Y.en_US
dc.contributor.authorHong S.en_US
dc.contributor.authorKong W.en_US
dc.contributor.authorKim J.en_US
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dc.contributor.authorid57194324147en_US
dc.contributor.authorid57218623519en_US
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dc.contributor.authorid57223322810en_US
dc.contributor.authorid57210741850en_US
dc.contributor.authorid48161860600en_US
dc.contributor.authorid57211194289en_US
dc.contributor.authorid57221976593en_US
dc.contributor.authorid55489853600en_US
dc.contributor.authorid58545849100en_US
dc.contributor.authorid55974683400en_US
dc.contributor.authorid7005694639en_US
dc.contributor.authorid57221945294en_US
dc.contributor.authorid24070804300en_US
dc.contributor.authorid26643411400en_US
dc.contributor.authorid36902640200en_US
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dc.contributor.authorid7405763882en_US
dc.contributor.authorid57193994298en_US
dc.contributor.authorid35179593300en_US
dc.date.accessioned2024-10-14T03:18:14Z
dc.date.available2024-10-14T03:18:14Z
dc.date.issued2023
dc.description.abstractLayer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current layer transfer processes are still low-throughput and too expensive to be commercially suitable. Here we report a high-throughput layer transfer technique that can produce multiple compound semiconductor membranes from a single wafer. We directly grow two-dimensional (2D) materials on III�N and III�V substrates using epitaxy tools, which enables a scheme comprised of multiple alternating layers of 2D materials and epilayers that can be formed by a single growth run. Each epilayer in the multistack structure is then harvested by layer-by-layer mechanical exfoliation, producing multiple freestanding membranes from a single wafer without involving time-consuming processes such as sacrificial layer etching or wafer polishing. Moreover, atomic-precision exfoliation at the 2D interface allows for the recycling of the wafers for subsequent membrane production, with the potential for greatly reducing the manufacturing cost. � 2023, The Author(s), under exclusive licence to Springer Nature Limited.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1038/s41565-023-01340-3
dc.identifier.epage470
dc.identifier.issue5
dc.identifier.scopus2-s2.0-85150392697
dc.identifier.spage464
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85150392697&doi=10.1038%2fs41565-023-01340-3&partnerID=40&md5=b09bd3cd35080dfef1b34dd2493f11fd
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/34166
dc.identifier.volume18
dc.pagecount6
dc.publisherNature Researchen_US
dc.sourceScopus
dc.sourcetitleNature Nanotechnology
dc.subjectCost reduction
dc.subjectEpilayers
dc.subjectEtching
dc.subjectMembranes
dc.subjectSemiconductor devices
dc.subjectSubstrates
dc.subjectFree standing membranes
dc.subjectHigh-throughput
dc.subjectIntegrated device
dc.subjectLayer transfer
dc.subjectLayer transfer process
dc.subjectMaterial-based
dc.subjectReduce costs
dc.subjectSemiconductor device fabrication
dc.subjectSingle wafer
dc.subjectTransfer technique
dc.subjectArticle
dc.subjectcrystal structure
dc.subjectdegradation
dc.subjectdesorption
dc.subjectepitaxy
dc.subjecthigh throughput analysis
dc.subjectlayer transfer process
dc.subjectmolecular dynamics
dc.subjectphysical phenomena
dc.subjectsurface property
dc.subjectSilicon wafers
dc.titleHigh-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer processen_US
dc.typeArticleen_US
dspace.entity.typePublication
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