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Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode

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dc.citedby2
dc.contributor.authorMenon P.S.en_US
dc.contributor.authorTasirin S.K.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorAbdullah S.F.en_US
dc.contributor.authorid57201289731en_US
dc.contributor.authorid55602329100en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid14319069500en_US
dc.date.accessioned2023-05-16T02:46:39Z
dc.date.available2023-05-16T02:46:39Z
dc.date.issued2014
dc.description.abstractSilicon-on-insulator (SOI)-based silicon germanium (SiGe) multi quantum-well (MQW) infrared PIN photodiode has a broad range of application including infrared sensors as well as in optical fiber communications. In this paper, we present improvement of a virtual lateral PIN photodiode with a SiGe/Si MQW structure as compared to a photodiode developed on bulk silicon. Hence, 5 periods of stacked SiGe MQW were grown on Si(100) substrate with a buried oxide (BOX) layer. A lateral PIN photodiode consisting of the SiGe/Si MQW layers as the active absorption layer with intensity response in the 800-1600 nm wavelength range was demonstrated. The results obtained for total quantum efficiency (TQE) and response speed were 26% and 16.7 ps (20.8 GHz) respectively for design parameters of intrinsic region length of 6 ?m, photo-absorption layer thickness of 0.305 ?m, incident optical power of 1 mW/cm2 and bias voltage of 2 V. In summary, the incorporation of SiGe MQWs into the standard lateral PIN photodiode has increased both the detection wavelength range up to the infrared region and the frequency response of the device. Copyright © 2014 American Scientific Publishersen_US
dc.description.natureFinalen_US
dc.identifier.doi10.1166/jno.2014.1618
dc.identifier.epage510
dc.identifier.issue4
dc.identifier.scopus2-s2.0-84920126230
dc.identifier.spage507
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84920126230&doi=10.1166%2fjno.2014.1618&partnerID=40&md5=b5da8f20b59e4a70271975d19d7db0ef
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22013
dc.identifier.volume9
dc.publisherAmerican Scientific Publishersen_US
dc.sourceScopus
dc.sourcetitleJournal of Nanoelectronics and Optoelectronics
dc.titleWide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiodeen_US
dc.typeArticleen_US
dspace.entity.typePublication
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